Time-of-Flight Mass Spectroscopy (TOF-MS) with superconducting detectors has two advantages over MS with conventional ion detectors. First, it is coverage for a very wide range of molecule weight over 1,000,000. Secondly, kinetic energies of accelerated molecules can be measured at impact events one by one. These unique features enable an ultimate detection efficiency of 100% for intact ions and a fragmentation analysis that is critical for top-down proteomics. Superconducting MS is expected to play a role in, for example, the detection of antigen-antibody complexes, which are important for medical diagnosis. In this paper, how superconductivity contributes to MS is described.

In this paper we focus on the numerical simulation of the mixing behaviors of distributed superconducting junction arrays at 1.2 THz. A novel type of superconducting tunnel junctions, i.e., NbN/AlN/Nb, which have a relatively high gap voltage (4.3 mV) and can reach a critical current density as high as several tens of kA/cm², are proposed for this characterization along with conventional Nb/AlOx/Nb junctions. The former is incorporated with a NbN/SiO₂/Al tuning circuit, and the latter with a Nb/SiO₂/Al and a NbTiN/SiO₂/Al tuning circuits. The noise performance, local-oscillator power requirement, IF bandwidth, and optimum embedding impedance are thoroughly characterized for the two types of distributed superconducting junction arrays.

A normal-distribution-function-shaped superconducting tunnel junction (NDF-STJ) which consists of Nb/Al-AlO_x/Al/Nb has been fabricated as an X-ray detector. Current - voltage characteristics were measured at 0.4 K using three kinds of STJs, which have the dispersion parameters σ of 0.25, 0.45 and 0.75. These STJs showed very low subgap leakage current of about 5 nA. By irradiating with 5.9 keV X-rays, we obtained the spectrum of these NDF-STJs. They showed good energy resolution with small magnetic fields of below 3 mT, which is about one-tenth of those for conventional-shaped STJs.

Single flux quantum (SFQ) circuit elements have been designed and fabricated using the YBa₂Cu₃O_7-δ ramp-edge junction technology. Logic operations of SFQ circuit elements, such as a toggle flip-flop (T-FF), a set-reset flip-flop (RS-FF), and a 96-junction Josephson transmission line (JTL), were successfully demonstrated, and dc supply current margins were confirmed up to temperatures higher than 30 K. The circuit layout was improved in order to suppress the critical current (I_c) spread that appears during the junction fabrication procedure. By employing the new circuit layout rule, correct operations at temperatures from 27 K to 34 K with dc supply current margins wider than 7% were confirmed for the T-FF with a single output. Moreover, the maximum operating frequencies of T-FFs were measured to be 360 GHz at 4.2 K and 210 GHz at 41 K, which are substantially higher than the values for the circuits with the conventional layout. According to the simulation result, the maximum operating frequency at 40 K was expected to be approximately 50% of the characteristic frequency at a bit error rate (BER) less than 10^-6.

This paper reviews our progress on the high-T_c superconducting (HTS) sampler development, covering from the circuit design to the latest experimental data in the sinusoidal and pulse waveform measurements. A computer simulation has revealed that our sampler circuit with an improved design enables waveform measurement with the bandwidth over 100 GHz even with the thermal noise at around 40 K. Using the HTS sampler circuits fabricated employing an improved layout, we demonstrated waveform measurements for sinusoidal signals with frequencies of up to 50 GHz, the upper limit of the signal generator we used, both in the voltage-input-type system with a high-frequency input line and in the current-input-type one with a superconducting pickup coil. In the pulse measurement using an on-chip sampler, we succeeded in observing pico-second-order-wide single flux quantum (SFQ) current pulses, suggesting the potential bandwidth of our HTS sampler of more than 125 GHz.

Development of ultrafast optical interfaces that can operate in sub-terahertz region is important to apply superconducting electronic devices to the high-end systems. We have performed several fundamental researches to realize the ultrafast optical input interface for superconducting electronic devices. Firstly, we observed optical response of amorphous Ge thin films, and the results indicated that an amorphous Ge photoconductive switch could stably operate in a terahertz frequency range as an optical-to-electrical signal converter in the low-temperature region below T_c of YBCO. Next, we have fabricated optical-to-electrical signal conversion system with photomixing technique, and we have demonstrated the generation and the detection of high frequency signals over 50 GHz. Finally, we have observed optical responses of a Josephson vortex flow transistor under irradiation of femtosecond laser pulses, and the results suggeste that the device has high potential as an optical interface.

We report on a subsystem of electromagnetic wave radiation and propagation estimation using high-Tc superconducting (HTS) receiving filters for S band. The subsystem, comprised of HTS filters, a rubidium standard signal generator (Rb SSG), a global positioning system (GPS) unit, etc., was used to evaluate the electromagnetic-wave (EMW) intensities, frequencies, the frequency interferences and the ground positions where the EM are measured. The developed subsystem showed high frequency selectivity for S band by using the HTS filters. Furthermore, we verified that the subsystem with the HTS filters operated on the moving car.

The utilization of a high-Tc superconductor for implementing a superconducting qubit is to be expected. Recent researches on the quantum property of Josephson junctions in high-Tc superconductors indicate that the low energy quasiparticle excitation is weak enough to observe the macroscopic quantum tunneling. Therefore, a detailed study on the quantum property of high-Tc Josephson junctions becomes more important for applications. We show our experimental results of the macroscopic tunneling of current biased intrinsic Josephson junctions in Bi-2212 and its resonant activation in the presence of microwave radiation.

A measurement system is developed to observe the switching current distribution in Bi₂Sr₂CaCu₂O_8+δ intrinsic Josephson junctions (IJJ's). We have designed the frequency responses of filters and cables to achieve the compatibility of sufficient isolation at high frequency region and accurate detection of the distribution at low frequency region. The temperature dependence of the switching current distributions measured on a IJJ by the present system agrees well with the theoretical calculation in the temperature range from 70 mK to 5 K. The consistency of the crossover temperature between experimental result and calculation suggests that the designed measurement system succeeded in observing the macroscopic quantum tunneling process.

This study proposes a novel structure of index-guiding square photonic crystal fibers (SPCF) having simultaneously ultra-flattened chromatic dispersion characteristics and low confinement losses in a wide wavelength range. The finite difference method (FDM) with anisotropic perfectly matched layers (PMLs) is used to analyze the various properties of square PCF. The findings reveal that it is possible to design five-ring PCFs with a flattened negative chromatic dispersion of 0-1.5 ps/(nm.km) in a wavelength range of 1.27 µm to 1.7 µm and a flattened chromatic dispersion of 01.15 ps/(nm.km) in a wavelength range of 1.25 µm to 1.61 µm. Simultaneously it also exhibited that the confinement losses are less than 10^-9 dB/m and 10^-10 dB/m in the wavelength range of 1.25 µm to 1.7 µm.

The propagation characteristics of the leaky TE mode in a two-dimensional photonic crystal waveguide is analyzed using the Fourier series expansion method combined with the Chew's perfectly matched layer (PML). The complex propagation constant and mode field profiles are numerically tested in detail. It is shown that the leakage phenomena can be well modeled by choosing the PML parameters in proper range.

This paper describes an 11-Gb/s CMOS demultiplexer (DEMUX) using redundant multi-valued logic (RMVL). The proposed circuit is received to serial binary data and is converted to parallel redundant multi-valued data. The converted data are reconverted to parallel binary data. By the redundant multi-valued data conversion, the RMVL makes it possible to achieve higher operating speeds than that of a conventional binary logic. The implemented DEMUX consists of eight integrators. The DEMUX is designed with 0.35 µm standard CMOS process. The validity and effectiveness are verified through HSPICE simulation. The DEMUX is achieved to the maximum data rate of 11-Gb/s and the average power consumption of 69.43 mW. This circuit is expected to operate at higher speed than 11-Gb/s in the deep-submicron process of the high operating frequency.

In this paper, we derive state equations for linearized discrete-time models of forth-order charge-pump phase-locked loops. We solve the differential equations of the loop filter by using the initial conditions and the boundary conditions in a period. The solved equations are linearized and rearranged as discrete-time state equations for checking stability conditions. Some behavioral simulations are performed to verify the proposed method. By examining the stability of loops with different conditions, we also propose an expression between the lower bound of the reference frequency, the open loop unit gain bandwidth, and the phase margin.

A novel ratio-oriented definition based on 2T2R (Two transistors & two phase change resistors) phase change memory (PCM) cell structure is proposed to gain a high density by multilevel storage. In this novel solution, no reference is needed and good robustness remains still as conventional 2T2R, which is crucial when feature size scales to nanometer technology node. A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible, and further optimization has been carried out. In addition, based on the ratio-oriented definition, a simpler and faster Error Control Coding (ECC) can be realized with n-Error-detection feasible.

This paper proposes high-Q distributed constant passive devices using wafer-level chip scale package (WL-CSP) technology, which can be realized on a Si CMOS chip. A 90directional coupler using the WL-CSP technology has center frequency of 25.6 GHz, insertion loss of -0.5 dB and isolation of -29.8 dB in the measurement result. The WL-CSP technology contributes to realize low-loss RF passive devices on Si CMOS chip, which is indispensable to achieve small-size, cost-effective and low-power monolithic wireless communication circuits (MWCCs).

A novel high-speed and low-voltage CMOS level shifter circuit is proposed. The proposed circuit is suitable for block-level dynamic voltage and frequency scaling (DVFS) environment or multiple-clock and multiple-power-domain logic blocks. In order to achieve high performance in a chip consisting of logic blocks having different VDD voltages, the proposed circuit uses the circuit techniques to reduce the capacitive loading of input signals and to minimize the contention between pull-up and pull-down transistors through positive feedback loop. The techniques improve the slew rate of output signals, so that the level transient delay and duty distortions can be reduced. The proposed level up/down shifters are designed to operate over a wide range of voltage and frequency and verified with Berkeley's 65 nm CMOS model parameters, which can cover a voltage range from 0.6 to 1.6 V and at least frequency range up to 1000 MHz within 3% duty errors. Through simulation with Berkeley's 65 nm CMOS model parameters, the level shifter circuits can solve the duty distortion preventing them from high speed operation within the duty ratio error of 3% at 1 GHz. For verification through performance comparison with reported level shifts, the simulations are carried out with 0.35 µm CMOS technology, 0.13 µm IBM CMOS technology and Berkeley's 65 nm CMOS model parameters. The compared results show that delay time and duty ratio distortion are improved about 68% and 75%, respectively.

Adsorption of antibody protein (anti-human IgG) onto plasma-polymerized thin films (PPF) with nanoscale thickness was characterized by atomic force microscopy (AFM) and quartz crystal microbalance (QCM). The PPF surface is very flat (less than 1 nm roughness) and its properties (charge and wettability) can be easily changed while retaining the backbone structure. We focus on two types of surfaces: one is the pristine surface of hexamethyldisiloxane (HMDS) PPF (hydrophobic) and the other is an HMDS PPF surface with nitrogen-plasma treatment (hydrophilic and positive-charged surface). The AFM image showed that the antibody molecules were densely adsorbed onto both surfaces and individual antibody molecules could be observed. The QCM profiles show a corresponding tendency with the AFM images. These results indicate that the plasma polymerized film can be the suitable biointerface for the application of biosensor and bioassay.