Circuits utilizing advanced process technologies have to correctly account for device parameter variation to optimize its performance. In this paper, analytical formulas for evaluating path delay variation of Multi-Threshold CMOS (MTCMOS) circuits are proposed. The proposed formulas express path delay and its variation as functions of process parameters that are determined by fabrication technology (threshold voltage, carrier mobility, etc.) and the circuit parameters that are determined by circuit structure (equivalent load capacitance and the concurrently switching gates). Two procedures to obtain the circuit parameter sets necessary in the calculation of the proposed formulas are also defined. With the proposed formulas, calculation time of a path delay variation becomes three orders faster than that of Monte-Carlo simulation. The proposed formulas are suitably applied for efficient design of MTCMOS circuits considering process variation.

A compact model is proposed for accurately incorporating effects of STI (shallow trench isolation) stress into post-layout simulation by making layout-dependent corrections to SPICE model parameters. The model takes in-plane (longitudinal and transverse) and normal components of the layout-dependent stress into account, and model formulas are devised from physical considerations. Not only can the model handle the shape of the active-area of any MOSFET conforming to design rules, but also considers distances to neighboring active-areas. Extraction of geometrical parameters from the layout can be performed by standard LVS (layout versus schematic) tools, and the corrections can subsequently be back-annotated into the netlist. The paper spells out the complete formulation by presenting expressions for the mobility and the threshold voltage explicitly by way of example. The model is amply validated by comparisons with experimental data from 90 nm- and 65 nm-CMOS technologies having the channel orientations of, respectively, <110> and <100>, both on a (100) surface. The worst-case standard errors turn out to be as small as 1.7% for the saturation current and 8 mV for the threshold voltage, as opposed to 20% and 50 mV without the model. Since device characteristics variations due to STI stress constitute a significant part of what have conventionally been treated as random variations, use of the proposed model could enable one to greatly narrow the guardbands required to guarantee a desired yield, thereby facilitating design closure.

This paper presents a novel wide tuning range CMOS Voltage Controlled Oscillator (VCO). VCO uses an on-chip variable inductor as an additional variable element to extend the tuning range of VCO. The fabricated variable inductor achieves the variable range of 35%. The VCO was fabricated using 0.35 µm standard CMOS process, and can be tuned continuously from 2.13 GHz to 3.28 GHz (tuning range of 38%) without degradation of phase noise. Wide tunable LC-VCO using a variable inductor is one of the key circuits for reconfigurable RF circuit.

This paper proposes a novel wide-tunable CMOS low-noise amplifier (LNA) using a variable inductor. The variable inductance can be tuned by shielding the magnetic flux, which uses a metal plate above the inductor. The metal plate can be moved using a MEMS actuator. At the present time, the MEMS actuator has not been implemented yet. In this paper, we present a feasibility study on the proposed LNA using the variable inductor. The proposed LNA uses two variable inductors for input and output impedance matching-tuning. The LNA achieves a power gain (PG) of over 10 dB at a tuning range of 1.6-3.2 GHz.

Cognitive radio and/or SDR (Software Defined Radio) inherently requires multi-band and multi standard wireless circuit. The circuit is implemented based on Si CMOS technology. In this article, the recent progress of Si RF CMOS is described and the reconfigurable RF CMOS circuit which was proposed by the authors is introduced. At the present and in the future, several kind of Si CMOS technology can be used for RF CMOS circuit implementation. The realistic RF CMOS circuit implementation toward cognitive and/or SDR is discussed.

Stochastic approaches for effective power distribution network optimization are proposed. Considering node voltages obtained using dynamic voltage drop analysis as sample variables, multi-variate regression is conducted to optimize clock timing metrics, such as clock skew or jitter. Aggregate correlation coefficient (ACC) which quantifies connectivity between different chip regions is defined in order to find a possible insufficiency in wire connections of a power distribution network. Based on the ACC, we also propose a procedure using linear regression to find the most effective region for improving clock timing metrics. By using the proposed procedure, effective fixing point were obtained two orders faster than by using brute force circuit simulation.

A physics-based equivalent circuit model of the ceramic capacitor is proposed, which can reproduce frequency characteristics of its impedance including the often observed yet hitherto physically unexplained kinks appearing above the primary series resonance frequency. The model can also account for parasitic effects of external inductances. In order to efficiently analyze and gain engineering insight into ceramic capacitors with a large number of metallic laminae, a two-dimensional method of moments is developed that treats the laminar structure as a uniform, effective medium. It turns out that the primary resonance and the kinks can be well understood and modeled by a lossy transmission line stub with a drastic wavelength reduction. The capacitor model is completed by adding components describing the skin effect and external inductances. The modeled impedance stays within a 4% margin of error up to 5 GHz. The proposed model could greatly improve the accuracy of power distribution network simulation.

We have proposed a current-cut switched-current matched filter (CC-SIMF) for direct-sequence code-division multiple-access (DS-CDMA). The 256-chip CC-SIMF can achieve low power consumption of less than 10 mW under high-speed operation of more than 16 Mcps. To reduce the current transfer error accumulation, we propose a parallel SIMF configuration. A 128-chip SIMF using 0.8-µm Complementally Metal Oxide Semiconductor (CMOS) process has been designed and fabricated. Optimization of the current memory cell structure has been described. The correlation operation at 16 Mcps has been obtained using a 128-chip orthogonal m-sequence. The code phase separation performance for path diversity has been clearly observed. The power consumption has been significantly reduced using the current-cut method.

This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.

This paper proposes a novel and an efficient method termed hypersphere sampling to estimate the circuit yield of low-failure probability with a large number of variable sources. Importance sampling using a mean-shift Gaussian mixture distribution as an alternative distribution is used for yield estimation. Further, the proposed method is used to determine the shift locations of the Gaussian distributions. This method involves the bisection of cones whose bases are part of the hyperspheres, in order to locate probabilistically important regions of failure; the determination of these regions accelerates the convergence speed of importance sampling. Clustering of the failure samples determines the required number of Gaussian distributions. Successful static random access memory (SRAM) yield estimations of 6- to 24-dimensional problems are presented. The number of Monte Carlo trials has been reduced by 2-5 orders of magnitude as compared to conventional Monte Carlo simulation methods.

Interconnect Length Distribution (ILD) represents the correlation between the number of interconnects and their length. The ILD can predict power consumption, clock frequency, chip size, etc. High core utilization and small circuit area have been reported to improve chip performance. We propose an ILD model to predict the correlation between core utilization and chip performance. The proposed model predicts the influences of interconnect length and interconnect density on circuit performances. As core utilization increases, small and simple circuits improve the performances. In large complex circuits, decreasing the wire coupling capacitance is more important than decreasing the total interconnect length for improvement of chip performance. The proposed ILD model expresses the actual ILD more accurately than conventional models.

Electrical modeling for surface-mount passive components is proposed. In order to accurately capture parasitic inductance, the proposed 2-port model accounts for surrounding ground layer configurations of the print circuit board (PCB) on which the component is mounted. Our model retains conventional modeling paradigm in which component suppliers provide their customers with simulation models characterized independently of the customers' PCB. We also present necessary corrections that compensate magnetic coupling between the separated models. Impedance and its anti-resonant frequency of two power distribution networks are experimentally analyzed being non-separated modeling as the reference. The proposed model achieved very good match with the reference result reducing 7-34% error of the conventional model to about 2%.

Low-temperature MOSFET is a promising device for future high-speed VLSI. We have developed a three-dimensional device simulator which can be used for the analysis of low-temperature deep-submicron MOSFET's. In order to improve the convergence property, the method of physical limiting on increment (PLI) was suggested. Two types of PLI, i.e., the limiting on potential increment (LPI) and the limiting on carrie-concentration increment (LCI) were showed to be very simple and effective methods for both 300 K and 77 K. Using the simulated results of COLD3, we showed the threshold variation in a low-temperature MOSFET due to the narrow channel effect can be suppressed if the device is designed according to the temperature scaling law.

This paper concerns a new model for estimating the wire length distribution (WLD) of a system-on-a-chip (SoC). The WLD represents the correlation between wire length and the number of interconnects, and we can predict circuit performances such as power consumption, maximum clock frequency, and chip size from the WLD. A WLD model considering core utilization has been proposed, and the core utilization has a large impact on circuit performance. However, the WLD model can treat only a one-function circuit. We propose a new WLD model considering core utilization to estimate the wire length distribution of SoC, which consists of several different-function macroblocks. We present an optimization method to determine each core utilization of macroblocks.

As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SDR), cognitive radios (CR), and reconfigurable radios (RR); (ii) systems that operate in the millimeter-wave or terahertz-wave region and achieve high speed and large-capacity data transmission; and (iii) microminiaturized low-power RF communication systems that will be extensively used in our everyday lives. However, classical technology for designing analog RF circuits cannot be used to design circuits for the abovementioned devices since it can be applied only in the case of continuous voltage and continuous time signals; therefore, it is necessary to integrate the design of high-speed digital circuits, which is based on the use of discrete voltages and the discrete time domain, with analog design, in order to both achieve wideband operation and compensate for signal distortions as well as variations in process, power supply voltage, and temperature. Moreover, as it is thought that small integration of the antenna and the interface circuit is indispensable to achieve miniaturized micro RF communication systems, the construction of the integrated design environment with the Micro Electro Mechanical Systems (MEMS) device etc. of the different kind devices becomes more important. In this paper, the history and the current status of the development of RF CMOS circuits are reviewed, and the future status of RF CMOS circuits is predicted.

This paper proposes high-Q distributed constant passive devices using wafer-level chip scale package (WL-CSP) technology, which can be realized on a Si CMOS chip. A 90directional coupler using the WL-CSP technology has center frequency of 25.6 GHz, insertion loss of -0.5 dB and isolation of -29.8 dB in the measurement result. The WL-CSP technology contributes to realize low-loss RF passive devices on Si CMOS chip, which is indispensable to achieve small-size, cost-effective and low-power monolithic wireless communication circuits (MWCCs).

A novel voltage measurement circuit which utilizes process variation is proposed. Using the proposed circuit, the voltage of a nonperiodic waveform at a particular time point can be accurately captured by a single clock pulse (one-shot measurement). The proposed circuit can be designed without compensation circuits against process variation, and thus occupies only a small area. An analytical expression of offset voltage for the comparator utilizing process variation (UPV-comparator), which plays a key role in the proposed circuit, is derived and design considerations for the proposed circuit are discussed. The circuit operation is confirmed through SPICE simulation using 90 nm CMOS device models. The -0.04 and -3 dB bandwidths (99% and 50% amplitudes) of the proposed circuit are about 10 MHz and far over 1 GHz, respectively. The circuit area is also estimated using an experimental layout.

A fast calculation tool for state-dependent capacitance of power distribution network is proposed. The proposed method achieves linear time-complexity, which can be more than four orders magnitude faster than a conventional SPICE-based capacitance calculation. Large circuits that have been unanalyzable with the conventional method become analyzable for more comprehensive exploration of capacitance variation. The capacitance obtained with the proposed method agrees SPICE-based method completely (up to 5 digits), and time-linearity is confirmed through numerical experiments on various circuits. The maximum and minimum capacitances are also calculated using average and variance estimation. Calculation times are linear time-complexity, too. The proposed tool facilitates to build an accurate macro model of an LSI.

A time-slicing ring oscillator (TSRO) which captures time-dependent delay degradation due to periodic transient voltage drop on a power supply network is proposed. An impact of the supply voltage fluctuations, including voltage drop and overshoot, on logic circuit delay is evaluated as a change of oscillation frequency. The TSRO is designed using standard logic cells so that it can be placed almost anywhere in a digital circuit wherein supply voltage fluctuation is concerned. We also propose a new procedure for reconstructing supply voltage waveform. The procedure enables us to accurately monitor time-dependent, effective supply voltages. The -1 dB bandwidth of the TSRO is simulated to be 15.7 GHz, and measured time resolution is 131 ps. Measurement results of a test chip using 90-nm standard CMOS process successfully proved the feasibility of both delay degradation and effective supply voltage fluctuation measurements. Measurement of spatial voltage drop fluctuation is achieved.

This paper proposes a low-phase-noise ring-VCO-based frequency multiplier with a new subharmonic direct injection locking technique that only uses a time-delay cell and four MOS transistors. Since the proposed technique behaves as an exclusive OR and can double the reference signal frequency, it increases phase correction points and achieves low phase noise characteristic across the wide output frequency range. The frequency multiplier was fabricated by using 65 nm Si CMOS process. Measured 1-MHz-offset phase noise at 6.34 GHz with reference signals of 528 MHz was -119 dBc/Hz.