RF Passive Components Using Metal Line on Si CMOS

Kazuya MASU; Kenichi OKADA; Hiroyuki ITO

doi:10.1093/ietele/e89-c.6.681

RF Passive Components Using Metal Line on Si CMOS

Kazuya MASU, Kenichi OKADA, Hiroyuki ITO

Full Text Views

0

Cite this

Summary :

This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.6 pp.681-691

Publication Date: 2006/06/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.6.681

Type of Manuscript: Special Section INVITED PAPER (Special Section on Analog Circuit and Device Technologies)

Category

Cite this

Copy

Kazuya MASU, Kenichi OKADA, Hiroyuki ITO, "RF Passive Components Using Metal Line on Si CMOS" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 6, pp. 681-691, June 2006, doi: 10.1093/ietele/e89-c.6.681.
Abstract: This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.6.681/_p

Copy

@ARTICLE{e89-c_6_681,
author={Kazuya MASU, Kenichi OKADA, Hiroyuki ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Passive Components Using Metal Line on Si CMOS},
year={2006},
volume={E89-C},
number={6},
pages={681-691},
abstract={This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.},
keywords={},
doi={10.1093/ietele/e89-c.6.681},
ISSN={1745-1353},
month={June},}

Copy

TY - JOUR
TI - RF Passive Components Using Metal Line on Si CMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 681
EP - 691
AU - Kazuya MASU
AU - Kenichi OKADA
AU - Hiroyuki ITO
PY - 2006
DO - 10.1093/ietele/e89-c.6.681
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2006
AB - This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.
ER -