IEICE TRANSACTIONS on Electronics
RF Passive Components Using Metal Line on Si CMOS
Summary :
This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.6 pp.681-691
- Publication Date
- 2006/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.6.681
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Analog Circuit and Device Technologies)
- Category
Authors
Keyword
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Kazuya MASU, Kenichi OKADA, Hiroyuki ITO, "RF Passive Components Using Metal Line on Si CMOS" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 6, pp. 681-691, June 2006, doi: 10.1093/ietele/e89-c.6.681.
Abstract: This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.6.681/_p
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@ARTICLE{e89-c_6_681,
author={Kazuya MASU, Kenichi OKADA, Hiroyuki ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Passive Components Using Metal Line on Si CMOS},
year={2006},
volume={E89-C},
number={6},
pages={681-691},
abstract={This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.},
keywords={},
doi={10.1093/ietele/e89-c.6.681},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - RF Passive Components Using Metal Line on Si CMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 681
EP - 691
AU - Kazuya MASU
AU - Kenichi OKADA
AU - Hiroyuki ITO
PY - 2006
DO - 10.1093/ietele/e89-c.6.681
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2006
AB - This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.
ER -
English
