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[Keyword] Si CMOS(1hit)

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  • RF Passive Components Using Metal Line on Si CMOS

    Kazuya MASU  Kenichi OKADA  Hiroyuki ITO  

     
    INVITED PAPER

      Vol:
    E89-C No:6
      Page(s):
    681-691

    This paper discusses the design and performance of on-chip passive components of transmission lines (TR) and inductors. First, the measurement technique of on chip passives is discussed. A transmission line that can be used for Gbps signal propagation on Si CMOS is examined. As a high density transmission line structure of diagonal-pair differential TR line is described. Also, a circuit and TR line is introduced for above 10 Gbps signal propagation. The on-chip inductor which is a key passive component in RF application of Si CMOS technology is discussed. We examine some on-chip inductors that have been developed in our group: small area inductor, high performance inductor using WL-CSP (Wafer-Level Chip-Size-Packaging) technology. Finally, a wide tuning range LC-VCO using a variable inductor for RF reconfigurable circuit is introduced.