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[Author] Nobuo MIKOSHIBA(3hit)

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  • A Novel Effective-Channel-Length/External-Resistance Extraction Method for Small-Geometry MOSFET's

    Takaaki YAGI  You-Wen YI  Mitsuchika SAITOH  Nobuo MIKOSHIBA  

     
    PAPER-Semiconductor Materials and Devices

      Vol:
    E77-C No:12
      Page(s):
    1966-1969

    A novel effective channel length extraction method has been developed, which utilizes the difference between the local threshold voltage of channel region and that of external region. In this method, the dependence of external resistance on Vg is taken into account, and it is not necessary to extract Vth. It is found that the external resistance can be approximated as the linear function of Vg with Vg around Vth. For a 0.4 µm gate length LDD MOSFET, the accuracy and resolution are estimated to be less than 0.02 µm and 0.003 µm, respectively.

  • Three-Dimensional Simulation of Low-Temperature Operation MOSFET's

    You-Wen YI  Kazuya MASU  Kazuo TSUBOUCHI  Nobuo MIKOSHIBA  

     
    PAPER

      Vol:
    E74-C No:6
      Page(s):
    1641-1647

    Low-temperature MOSFET is a promising device for future high-speed VLSI. We have developed a three-dimensional device simulator which can be used for the analysis of low-temperature deep-submicron MOSFET's. In order to improve the convergence property, the method of physical limiting on increment (PLI) was suggested. Two types of PLI, i.e., the limiting on potential increment (LPI) and the limiting on carrie-concentration increment (LCI) were showed to be very simple and effective methods for both 300 K and 77 K. Using the simulated results of COLD3, we showed the threshold variation in a low-temperature MOSFET due to the narrow channel effect can be suppressed if the device is designed according to the temperature scaling law.

  • Theory of Acoustic Distributed Feedback Lasers with Stripe Active Regions

    Ikuo SUEMUNE  Masamichi YAMANISHI  Nobuo MIKOSHIBA  Tadasu KAWANO  

     
    PAPER-Optical and Quantum Electronics

      Vol:
    E64-E No:4
      Page(s):
    258-265

    Acoustic distributed feedback (ADFB) lasers with stripe active regions for current injections have been theoretically analysed. The theory is based on a coupled-mode analysis employing Bragg guided modes. The characteristic equation of oscillation for the two-dimensional DFB laser is derived in an explicit form. The mode spectra and the threshold gains for the onset of the oscillation of the ADFB laser are obtained, and the characteristics of the two-dimensional mode structure is discussed. Also discussed is the effect of complex photoelastic constants.