IEICE TRANSACTIONS on Electronics
Design and Fabrication of 40 Gbps-NRZ SOA-MZI All-Optical Wavelength Converters with Submicron-Width Bulk InGaAsP Active Waveguides
Summary :
The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.1118-1123
- Publication Date
- 2007/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.5.1118
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
- Category
- Semiconductor Devices
Authors
Yasunori MIYAZAKI
Kazuhisa TAKAGI
Keisuke MATSUMOTO
Toshiharu MIYAHARA
Tatsuo HATTA
Satoshi NISHIKAWA
Toshitaka AOYAGI
Kuniaki MOTOSHIMA
Keyword
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Yasunori MIYAZAKI, Kazuhisa TAKAGI, Keisuke MATSUMOTO, Toshiharu MIYAHARA, Tatsuo HATTA, Satoshi NISHIKAWA, Toshitaka AOYAGI, Kuniaki MOTOSHIMA, "Design and Fabrication of 40 Gbps-NRZ SOA-MZI All-Optical Wavelength Converters with Submicron-Width Bulk InGaAsP Active Waveguides" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 1118-1123, May 2007, doi: 10.1093/ietele/e90-c.5.1118.
Abstract: The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.1118/_p
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@ARTICLE{e90-c_5_1118,
author={Yasunori MIYAZAKI, Kazuhisa TAKAGI, Keisuke MATSUMOTO, Toshiharu MIYAHARA, Tatsuo HATTA, Satoshi NISHIKAWA, Toshitaka AOYAGI, Kuniaki MOTOSHIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design and Fabrication of 40 Gbps-NRZ SOA-MZI All-Optical Wavelength Converters with Submicron-Width Bulk InGaAsP Active Waveguides},
year={2007},
volume={E90-C},
number={5},
pages={1118-1123},
abstract={The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.},
keywords={},
doi={10.1093/ietele/e90-c.5.1118},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Design and Fabrication of 40 Gbps-NRZ SOA-MZI All-Optical Wavelength Converters with Submicron-Width Bulk InGaAsP Active Waveguides
T2 - IEICE TRANSACTIONS on Electronics
SP - 1118
EP - 1123
AU - Yasunori MIYAZAKI
AU - Kazuhisa TAKAGI
AU - Keisuke MATSUMOTO
AU - Toshiharu MIYAHARA
AU - Tatsuo HATTA
AU - Satoshi NISHIKAWA
AU - Toshitaka AOYAGI
AU - Kuniaki MOTOSHIMA
PY - 2007
DO - 10.1093/ietele/e90-c.5.1118
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.
ER -
English
