High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station

Kouji ISHIKURA; Isao TAKENAKA; Hidemasa TAKAHASHI; Kouichi HASEGAWA; Kazunori ASANO; Naotaka IWATA

doi:10.1093/ietele/e90-c.5.923

High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station

Kouji ISHIKURA, Isao TAKENAKA, Hidemasa TAKAHASHI, Kouichi HASEGAWA, Kazunori ASANO, Naotaka IWATA

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This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28 V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain current dispersion effectively cooperating with the 1st-FP, and it can also reduce the gate-drain parasitic capacitance. The developed push-pull amplifier, with four Dual-FPFET chips, demonstrated 55.1 dBm (320 W) output power with a 14.0 dB linear gain and a drain efficiency of 62% at 2.14 GHz. Under two-carrier W-CDMA signals, it showed a high drain efficiency of 30% and low third-order Inter-modulation distortion of -37 dBc at output power of 47.5 dBm.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.923-928

Publication Date: 2007/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.5.923

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Compound Semiconductor and Power Devices

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Kouji ISHIKURA, Isao TAKENAKA, Hidemasa TAKAHASHI, Kouichi HASEGAWA, Kazunori ASANO, Naotaka IWATA, "High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 5, pp. 923-928, May 2007, doi: 10.1093/ietele/e90-c.5.923.
Abstract: This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28 V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain current dispersion effectively cooperating with the 1st-FP, and it can also reduce the gate-drain parasitic capacitance. The developed push-pull amplifier, with four Dual-FPFET chips, demonstrated 55.1 dBm (320 W) output power with a 14.0 dB linear gain and a drain efficiency of 62% at 2.14 GHz. Under two-carrier W-CDMA signals, it showed a high drain efficiency of 30% and low third-order Inter-modulation distortion of -37 dBc at output power of 47.5 dBm.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.923/_p

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@ARTICLE{e90-c_5_923,
author={Kouji ISHIKURA, Isao TAKENAKA, Hidemasa TAKAHASHI, Kouichi HASEGAWA, Kazunori ASANO, Naotaka IWATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station},
year={2007},
volume={E90-C},
number={5},
pages={923-928},
abstract={This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28 V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain current dispersion effectively cooperating with the 1st-FP, and it can also reduce the gate-drain parasitic capacitance. The developed push-pull amplifier, with four Dual-FPFET chips, demonstrated 55.1 dBm (320 W) output power with a 14.0 dB linear gain and a drain efficiency of 62% at 2.14 GHz. Under two-carrier W-CDMA signals, it showed a high drain efficiency of 30% and low third-order Inter-modulation distortion of -37 dBc at output power of 47.5 dBm.},
keywords={},
doi={10.1093/ietele/e90-c.5.923},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station
T2 - IEICE TRANSACTIONS on Electronics
SP - 923
EP - 928
AU - Kouji ISHIKURA
AU - Isao TAKENAKA
AU - Hidemasa TAKAHASHI
AU - Kouichi HASEGAWA
AU - Kazunori ASANO
AU - Naotaka IWATA
PY - 2007
DO - 10.1093/ietele/e90-c.5.923
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28 V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain current dispersion effectively cooperating with the 1st-FP, and it can also reduce the gate-drain parasitic capacitance. The developed push-pull amplifier, with four Dual-FPFET chips, demonstrated 55.1 dBm (320 W) output power with a 14.0 dB linear gain and a drain efficiency of 62% at 2.14 GHz. Under two-carrier W-CDMA signals, it showed a high drain efficiency of 30% and low third-order Inter-modulation distortion of -37 dBc at output power of 47.5 dBm.
ER -