IEICE TRANSACTIONS on Electronics
Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors
Summary :
A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.943-948
- Publication Date
- 2007/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.5.943
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Emerging Devices
Authors
Wancheng ZHANG
Katsuhiko NISHIGUCHI
Yukinori ONO
Akira FUJIWARA
Hiroshi YAMAGUCHI
Hiroshi INOKAWA
Yasuo TAKAHASHI
Nan-Jian WU
Keyword
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Wancheng ZHANG, Katsuhiko NISHIGUCHI, Yukinori ONO, Akira FUJIWARA, Hiroshi YAMAGUCHI, Hiroshi INOKAWA, Yasuo TAKAHASHI, Nan-Jian WU, "Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 943-948, May 2007, doi: 10.1093/ietele/e90-c.5.943.
Abstract: A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.943/_p
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@ARTICLE{e90-c_5_943,
author={Wancheng ZHANG, Katsuhiko NISHIGUCHI, Yukinori ONO, Akira FUJIWARA, Hiroshi YAMAGUCHI, Hiroshi INOKAWA, Yasuo TAKAHASHI, Nan-Jian WU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors},
year={2007},
volume={E90-C},
number={5},
pages={943-948},
abstract={A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.},
keywords={},
doi={10.1093/ietele/e90-c.5.943},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 943
EP - 948
AU - Wancheng ZHANG
AU - Katsuhiko NISHIGUCHI
AU - Yukinori ONO
AU - Akira FUJIWARA
AU - Hiroshi YAMAGUCHI
AU - Hiroshi INOKAWA
AU - Yasuo TAKAHASHI
AU - Nan-Jian WU
PY - 2007
DO - 10.1093/ietele/e90-c.5.943
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.
ER -
English
