Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices

Seongjae CHO; Jang-Gn YUN; Il Han PARK; Jung Hoon LEE; Jong Pil KIM; Jong-Duk LEE; Hyungcheol SHIN; Byung-Gook PARK

doi:10.1093/ietele/e90-c.5.988

Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices

Seongjae CHO, Jang-Gn YUN, Il Han PARK, Jung Hoon LEE, Jong Pil KIM, Jong-Duk LEE, Hyungcheol SHIN, Byung-Gook PARK

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One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.

Publication: IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.988-993

Publication Date: 2007/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e90-c.5.988

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Novel MOSFET Structures

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Seongjae CHO, Jang-Gn YUN, Il Han PARK, Jung Hoon LEE, Jong Pil KIM, Jong-Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, "Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices" in IEICE TRANSACTIONS on Electronics, vol. E90-C, no. 5, pp. 988-993, May 2007, doi: 10.1093/ietele/e90-c.5.988.
Abstract: One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.988/_p

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@ARTICLE{e90-c_5_988,
author={Seongjae CHO, Jang-Gn YUN, Il Han PARK, Jung Hoon LEE, Jong Pil KIM, Jong-Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices},
year={2007},
volume={E90-C},
number={5},
pages={988-993},
abstract={One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.},
keywords={},
doi={10.1093/ietele/e90-c.5.988},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 988
EP - 993
AU - Seongjae CHO
AU - Jang-Gn YUN
AU - Il Han PARK
AU - Jung Hoon LEE
AU - Jong Pil KIM
AU - Jong-Duk LEE
AU - Hyungcheol SHIN
AU - Byung-Gook PARK
PY - 2007
DO - 10.1093/ietele/e90-c.5.988
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
ER -