One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
Seongjae CHO
Jang-Gn YUN
Il Han PARK
Jung Hoon LEE
Jong Pil KIM
Jong-Duk LEE
Hyungcheol SHIN
Byung-Gook PARK
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Seongjae CHO, Jang-Gn YUN, Il Han PARK, Jung Hoon LEE, Jong Pil KIM, Jong-Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, "Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 988-993, May 2007, doi: 10.1093/ietele/e90-c.5.988.
Abstract: One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.988/_p
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@ARTICLE{e90-c_5_988,
author={Seongjae CHO, Jang-Gn YUN, Il Han PARK, Jung Hoon LEE, Jong Pil KIM, Jong-Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices},
year={2007},
volume={E90-C},
number={5},
pages={988-993},
abstract={One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.},
keywords={},
doi={10.1093/ietele/e90-c.5.988},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 988
EP - 993
AU - Seongjae CHO
AU - Jang-Gn YUN
AU - Il Han PARK
AU - Jung Hoon LEE
AU - Jong Pil KIM
AU - Jong-Duk LEE
AU - Hyungcheol SHIN
AU - Byung-Gook PARK
PY - 2007
DO - 10.1093/ietele/e90-c.5.988
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
ER -