IEICE TRANSACTIONS on Electronics
Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits
Summary :
Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metal-oxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.2 pp.145-149
- Publication Date
- 2008/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.2.145
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
- Category
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Yuzo FURUKAWA, Hiroo YONEZU, Akihiro WAKAHARA, "Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 2, pp. 145-149, February 2008, doi: 10.1093/ietele/e91-c.2.145.
Abstract: Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metal-oxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.2.145/_p
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@ARTICLE{e91-c_2_145,
author={Yuzo FURUKAWA, Hiroo YONEZU, Akihiro WAKAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits},
year={2008},
volume={E91-C},
number={2},
pages={145-149},
abstract={Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metal-oxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.},
keywords={},
doi={10.1093/ietele/e91-c.2.145},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 145
EP - 149
AU - Yuzo FURUKAWA
AU - Hiroo YONEZU
AU - Akihiro WAKAHARA
PY - 2008
DO - 10.1093/ietele/e91-c.2.145
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2008
AB - Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metal-oxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.
ER -
English
