IEICE TRANSACTIONS on Electronics
Recent Progresses of Si-Based Photonics in Chinese Main Land
Summary :
Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850~900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 1011 cm-2 were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with η of 34.4% and FWHM of 27 nm were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.2 pp.150-155
- Publication Date
- 2008/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.2.150
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Jinzhong YU, Qiming WANG, Buwen CHENG, Saowu CHEN, Yuhua ZUO, "Recent Progresses of Si-Based Photonics in Chinese Main Land" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 2, pp. 150-155, February 2008, doi: 10.1093/ietele/e91-c.2.150.
Abstract: Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850~900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 1011 cm-2 were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with η of 34.4% and FWHM of 27 nm were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.2.150/_p
Copy
@ARTICLE{e91-c_2_150,
author={Jinzhong YU, Qiming WANG, Buwen CHENG, Saowu CHEN, Yuhua ZUO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Recent Progresses of Si-Based Photonics in Chinese Main Land},
year={2008},
volume={E91-C},
number={2},
pages={150-155},
abstract={Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850~900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 1011 cm-2 were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with η of 34.4% and FWHM of 27 nm were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16
keywords={},
doi={10.1093/ietele/e91-c.2.150},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Recent Progresses of Si-Based Photonics in Chinese Main Land
T2 - IEICE TRANSACTIONS on Electronics
SP - 150
EP - 155
AU - Jinzhong YU
AU - Qiming WANG
AU - Buwen CHENG
AU - Saowu CHEN
AU - Yuhua ZUO
PY - 2008
DO - 10.1093/ietele/e91-c.2.150
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2008
AB - Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850~900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 1011 cm-2 were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with η of 34.4% and FWHM of 27 nm were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16
ER -
English
