Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si

Sungbong PARK; Yasuhiko ISHIKAWA; Tai TSUCHIZAWA; Toshifumi WATANABE; Koji YAMADA; Sei-ichi ITABASHI; Kazumi WADA

doi:10.1093/ietele/e91-c.2.181

Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si

Sungbong PARK, Yasuhiko ISHIKAWA, Tai TSUCHIZAWA, Toshifumi WATANABE, Koji YAMADA, Sei-ichi ITABASHI, Kazumi WADA

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Effect of the post-growth annealing on the morphology of a Ge mesa selectively grown on Si was studied from the viewpoint of near-infrared photodiode applications. By ultrahigh-vacuum chemical vapor deposition, Ge mesas were selectively grown at 600 on Si (001) substrates partially covered with SiO₂ masks. The as-grown Ge mesas showed trapezoidal cross-sections having a top (001) surface and {311} sidewall facets, as similar to previous reports. However, after the subsequent post-growth annealing at ~800 in the ultrahigh-vacuum chamber, the mesas were deformed into rounded shapes having a depression at the center and mounds near the edges. Such a deformation cannot be observed for the samples annealed once after cooled and exposed to the air. The residual hydrogen atoms on the Ge surface from the germane (GeH₄) decomposition is regarded as a trigger to the observed morphological instability, while the final mesa shape is determined in order to minimize a sum of the surface and/or strain energies.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.2 pp.181-186

Publication Date: 2008/02/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.2.181

Type of Manuscript: Special Section PAPER (Special Section on Silicon Photonics Technologies and Their Applications)

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Sungbong PARK, Yasuhiko ISHIKAWA, Tai TSUCHIZAWA, Toshifumi WATANABE, Koji YAMADA, Sei-ichi ITABASHI, Kazumi WADA, "Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 2, pp. 181-186, February 2008, doi: 10.1093/ietele/e91-c.2.181.
Abstract: Effect of the post-growth annealing on the morphology of a Ge mesa selectively grown on Si was studied from the viewpoint of near-infrared photodiode applications. By ultrahigh-vacuum chemical vapor deposition, Ge mesas were selectively grown at 600 on Si (001) substrates partially covered with SiO₂ masks. The as-grown Ge mesas showed trapezoidal cross-sections having a top (001) surface and {311} sidewall facets, as similar to previous reports. However, after the subsequent post-growth annealing at ~800 in the ultrahigh-vacuum chamber, the mesas were deformed into rounded shapes having a depression at the center and mounds near the edges. Such a deformation cannot be observed for the samples annealed once after cooled and exposed to the air. The residual hydrogen atoms on the Ge surface from the germane (GeH₄) decomposition is regarded as a trigger to the observed morphological instability, while the final mesa shape is determined in order to minimize a sum of the surface and/or strain energies.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.2.181/_p

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@ARTICLE{e91-c_2_181,
author={Sungbong PARK, Yasuhiko ISHIKAWA, Tai TSUCHIZAWA, Toshifumi WATANABE, Koji YAMADA, Sei-ichi ITABASHI, Kazumi WADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si},
year={2008},
volume={E91-C},
number={2},
pages={181-186},
abstract={Effect of the post-growth annealing on the morphology of a Ge mesa selectively grown on Si was studied from the viewpoint of near-infrared photodiode applications. By ultrahigh-vacuum chemical vapor deposition, Ge mesas were selectively grown at 600 on Si (001) substrates partially covered with SiO₂ masks. The as-grown Ge mesas showed trapezoidal cross-sections having a top (001) surface and {311} sidewall facets, as similar to previous reports. However, after the subsequent post-growth annealing at ~800 in the ultrahigh-vacuum chamber, the mesas were deformed into rounded shapes having a depression at the center and mounds near the edges. Such a deformation cannot be observed for the samples annealed once after cooled and exposed to the air. The residual hydrogen atoms on the Ge surface from the germane (GeH₄) decomposition is regarded as a trigger to the observed morphological instability, while the final mesa shape is determined in order to minimize a sum of the surface and/or strain energies.},
keywords={},
doi={10.1093/ietele/e91-c.2.181},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si
T2 - IEICE TRANSACTIONS on Electronics
SP - 181
EP - 186
AU - Sungbong PARK
AU - Yasuhiko ISHIKAWA
AU - Tai TSUCHIZAWA
AU - Toshifumi WATANABE
AU - Koji YAMADA
AU - Sei-ichi ITABASHI
AU - Kazumi WADA
PY - 2008
DO - 10.1093/ietele/e91-c.2.181
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2008
AB - Effect of the post-growth annealing on the morphology of a Ge mesa selectively grown on Si was studied from the viewpoint of near-infrared photodiode applications. By ultrahigh-vacuum chemical vapor deposition, Ge mesas were selectively grown at 600 on Si (001) substrates partially covered with SiO₂ masks. The as-grown Ge mesas showed trapezoidal cross-sections having a top (001) surface and {311} sidewall facets, as similar to previous reports. However, after the subsequent post-growth annealing at ~800 in the ultrahigh-vacuum chamber, the mesas were deformed into rounded shapes having a depression at the center and mounds near the edges. Such a deformation cannot be observed for the samples annealed once after cooled and exposed to the air. The residual hydrogen atoms on the Ge surface from the germane (GeH₄) decomposition is regarded as a trigger to the observed morphological instability, while the final mesa shape is determined in order to minimize a sum of the surface and/or strain energies.
ER -