IEICE TRANSACTIONS on Electronics
Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Summary :
We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO2 as a gate insulator. The maximum transconductance of 23 mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO2 gate oxide has been obtained.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1001-1003
- Publication Date
- 2008/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.7.1001
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
- Category
- Nitride-based Devices
Authors
Keyword
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Shun SUGIURA, Shigeru KISHIMOTO, Takashi MIZUTANI, Masayuki KURODA, Tetsuzo UEDA, Tsuyoshi TANAKA, "Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1001-1003, July 2008, doi: 10.1093/ietele/e91-c.7.1001.
Abstract: We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO2 as a gate insulator. The maximum transconductance of 23 mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO2 gate oxide has been obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1001/_p
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@ARTICLE{e91-c_7_1001,
author={Shun SUGIURA, Shigeru KISHIMOTO, Takashi MIZUTANI, Masayuki KURODA, Tetsuzo UEDA, Tsuyoshi TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide},
year={2008},
volume={E91-C},
number={7},
pages={1001-1003},
abstract={We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO2 as a gate insulator. The maximum transconductance of 23 mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO2 gate oxide has been obtained.},
keywords={},
doi={10.1093/ietele/e91-c.7.1001},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
T2 - IEICE TRANSACTIONS on Electronics
SP - 1001
EP - 1003
AU - Shun SUGIURA
AU - Shigeru KISHIMOTO
AU - Takashi MIZUTANI
AU - Masayuki KURODA
AU - Tetsuzo UEDA
AU - Tsuyoshi TANAKA
PY - 2008
DO - 10.1093/ietele/e91-c.7.1001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO2 as a gate insulator. The maximum transconductance of 23 mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO2 gate oxide has been obtained.
ER -
English
