A Study on Ohmic Contact to Dry-Etched p-GaN

Cheng-Yu HU; Jin-Ping AO; Masaya OKADA; Yasuo OHNO

doi:10.1093/ietele/e91-c.7.1020

A Study on Ohmic Contact to Dry-Etched p-GaN

Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO

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Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl₄/Cl₂-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000C 30 s) was tried on the SiCl₄/Cl₂-etched p-GaN and Ohmic contact was obtained.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1020-1024

Publication Date: 2008/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.7.1020

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)

Category: GaN Process Technology

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Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO, "A Study on Ohmic Contact to Dry-Etched p-GaN" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 7, pp. 1020-1024, July 2008, doi: 10.1093/ietele/e91-c.7.1020.
Abstract: Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl₄/Cl₂-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000C 30 s) was tried on the SiCl₄/Cl₂-etched p-GaN and Ohmic contact was obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1020/_p

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@ARTICLE{e91-c_7_1020,
author={Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study on Ohmic Contact to Dry-Etched p-GaN},
year={2008},
volume={E91-C},
number={7},
pages={1020-1024},
abstract={Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl₄/Cl₂-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000C 30 s) was tried on the SiCl₄/Cl₂-etched p-GaN and Ohmic contact was obtained.},
keywords={},
doi={10.1093/ietele/e91-c.7.1020},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - A Study on Ohmic Contact to Dry-Etched p-GaN
T2 - IEICE TRANSACTIONS on Electronics
SP - 1020
EP - 1024
AU - Cheng-Yu HU
AU - Jin-Ping AO
AU - Masaya OKADA
AU - Yasuo OHNO
PY - 2008
DO - 10.1093/ietele/e91-c.7.1020
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl₄/Cl₂-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000C 30 s) was tried on the SiCl₄/Cl₂-etched p-GaN and Ohmic contact was obtained.
ER -