IEICE TRANSACTIONS on Electronics
Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
Summary :
Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3 S/mm at VDS = 0.2 V and an fTLg product of 33 GHz-µm for a 0.2 µm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2/V-sec, an fmax of 34 GHz for a 0.2 µm gate length, a threshold voltage of 90 mV, and a subthreshold slope of 106 mV/dec at VDS = -1.0 V.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1050-1057
- Publication Date
- 2008/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.7.1050
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
- Category
Authors
J. Brad BOOS
Brian R. BENNETT
Nicolas A. PAPANICOLAOU
Mario G. ANCONA
James G. CHAMPLAIN
Yeong-Chang CHOU
Michael D. LANGE
Jeffrey M. YANG
Robert BASS
Doewon PARK
Ben V. SHANABROOK
Keyword
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J. Brad BOOS, Brian R. BENNETT, Nicolas A. PAPANICOLAOU, Mario G. ANCONA, James G. CHAMPLAIN, Yeong-Chang CHOU, Michael D. LANGE, Jeffrey M. YANG, Robert BASS, Doewon PARK, Ben V. SHANABROOK, "Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1050-1057, July 2008, doi: 10.1093/ietele/e91-c.7.1050.
Abstract: Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3 S/mm at VDS = 0.2 V and an fTLg product of 33 GHz-µm for a 0.2 µm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2/V-sec, an fmax of 34 GHz for a 0.2 µm gate length, a threshold voltage of 90 mV, and a subthreshold slope of 106 mV/dec at VDS = -1.0 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1050/_p
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@ARTICLE{e91-c_7_1050,
author={J. Brad BOOS, Brian R. BENNETT, Nicolas A. PAPANICOLAOU, Mario G. ANCONA, James G. CHAMPLAIN, Yeong-Chang CHOU, Michael D. LANGE, Jeffrey M. YANG, Robert BASS, Doewon PARK, Ben V. SHANABROOK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications},
year={2008},
volume={E91-C},
number={7},
pages={1050-1057},
abstract={Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3 S/mm at VDS = 0.2 V and an fTLg product of 33 GHz-µm for a 0.2 µm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2/V-sec, an fmax of 34 GHz for a 0.2 µm gate length, a threshold voltage of 90 mV, and a subthreshold slope of 106 mV/dec at VDS = -1.0 V.},
keywords={},
doi={10.1093/ietele/e91-c.7.1050},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1050
EP - 1057
AU - J. Brad BOOS
AU - Brian R. BENNETT
AU - Nicolas A. PAPANICOLAOU
AU - Mario G. ANCONA
AU - James G. CHAMPLAIN
AU - Yeong-Chang CHOU
AU - Michael D. LANGE
AU - Jeffrey M. YANG
AU - Robert BASS
AU - Doewon PARK
AU - Ben V. SHANABROOK
PY - 2008
DO - 10.1093/ietele/e91-c.7.1050
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3 S/mm at VDS = 0.2 V and an fTLg product of 33 GHz-µm for a 0.2 µm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2/V-sec, an fmax of 34 GHz for a 0.2 µm gate length, a threshold voltage of 90 mV, and a subthreshold slope of 106 mV/dec at VDS = -1.0 V.
ER -
English
