IEICE TRANSACTIONS on Electronics
1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Summary :
We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p +-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1104-1108
- Publication Date
- 2008/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.7.1104
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
- Category
- GaAs- and InP-Based Devices
Authors
Keyword
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Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA, "1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1104-1108, July 2008, doi: 10.1093/ietele/e91-c.7.1104.
Abstract: We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p +-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1104/_p
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@ARTICLE{e91-c_7_1104,
author={Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET},
year={2008},
volume={E91-C},
number={7},
pages={1104-1108},
abstract={We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p +-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm
keywords={},
doi={10.1093/ietele/e91-c.7.1104},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
T2 - IEICE TRANSACTIONS on Electronics
SP - 1104
EP - 1108
AU - Fumio HARIMA
AU - Yasunori BITO
AU - Hidemasa TAKAHASHI
AU - Naotaka IWATA
PY - 2008
DO - 10.1093/ietele/e91-c.7.1104
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p +-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm
ER -
English
