1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p<SUP>+</SUP>-GaAs Gate Hetero-Junction FET

Fumio HARIMA; Yasunori BITO; Hidemasa TAKAHASHI; Naotaka IWATA

doi:10.1093/ietele/e91-c.7.1104

1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p⁺-GaAs Gate Hetero-Junction FET

Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA

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We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p⁺-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm1.5 mm0.4 mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20 dBm is achieved with an associated gain of 22 dB. Also, sufficiently low leakage current of 0.25 µA at 27 is exhibited, which is comparable to conventional HBT power amplifiers.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.7 pp.1104-1108

Publication Date: 2008/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.7.1104

Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)

Category: GaAs- and InP-Based Devices

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Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA, "1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 7, pp. 1104-1108, July 2008, doi: 10.1093/ietele/e91-c.7.1104.
Abstract: We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p⁺-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm1.5 mm0.4 mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20 dBm is achieved with an associated gain of 22 dB. Also, sufficiently low leakage current of 0.25 µA at 27 is exhibited, which is comparable to conventional HBT power amplifiers.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1104/_p

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@ARTICLE{e91-c_7_1104,
author={Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET},
year={2008},
volume={E91-C},
number={7},
pages={1104-1108},
abstract={We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p⁺-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm1.5 mm0.4 mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20 dBm is achieved with an associated gain of 22 dB. Also, sufficiently low leakage current of 0.25 µA at 27 is exhibited, which is comparable to conventional HBT power amplifiers.},
keywords={},
doi={10.1093/ietele/e91-c.7.1104},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
T2 - IEICE TRANSACTIONS on Electronics
SP - 1104
EP - 1108
AU - Fumio HARIMA
AU - Yasunori BITO
AU - Hidemasa TAKAHASHI
AU - Naotaka IWATA
PY - 2008
DO - 10.1093/ietele/e91-c.7.1104
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p⁺-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm1.5 mm0.4 mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20 dBm is achieved with an associated gain of 22 dB. Also, sufficiently low leakage current of 0.25 µA at 27 is exhibited, which is comparable to conventional HBT power amplifiers.
ER -