IEICE TRANSACTIONS on Electronics
A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
Summary :
In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.8 pp.1356-1364
- Publication Date
- 2008/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.8.1356
- Type of Manuscript
- PAPER
- Category
- Electronic Circuits
Authors
Keyword
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Hsuan-I PAN, Chern-Lin CHEN, "A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1356-1364, August 2008, doi: 10.1093/ietele/e91-c.8.1356.
Abstract: In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1356/_p
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@ARTICLE{e91-c_8_1356,
author={Hsuan-I PAN, Chern-Lin CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor},
year={2008},
volume={E91-C},
number={8},
pages={1356-1364},
abstract={In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.},
keywords={},
doi={10.1093/ietele/e91-c.8.1356},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1356
EP - 1364
AU - Hsuan-I PAN
AU - Chern-Lin CHEN
PY - 2008
DO - 10.1093/ietele/e91-c.8.1356
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
ER -
English
