IEICE TRANSACTIONS on Electronics
Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Summary :
We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.8 pp.1379-1381
- Publication Date
- 2008/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.8.1379
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
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Norio SADACHIKA, Takahiro MURAKAMI, Hideki OKA, Ryou TANABE, Hans Juergen MATTAUSCH, Mitiko MIURA-MATTAUSCH, "Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1379-1381, August 2008, doi: 10.1093/ietele/e91-c.8.1379.
Abstract: We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1379/_p
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@ARTICLE{e91-c_8_1379,
author={Norio SADACHIKA, Takahiro MURAKAMI, Hideki OKA, Ryou TANABE, Hans Juergen MATTAUSCH, Mitiko MIURA-MATTAUSCH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization},
year={2008},
volume={E91-C},
number={8},
pages={1379-1381},
abstract={We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.},
keywords={},
doi={10.1093/ietele/e91-c.8.1379},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
T2 - IEICE TRANSACTIONS on Electronics
SP - 1379
EP - 1381
AU - Norio SADACHIKA
AU - Takahiro MURAKAMI
AU - Hideki OKA
AU - Ryou TANABE
AU - Hans Juergen MATTAUSCH
AU - Mitiko MIURA-MATTAUSCH
PY - 2008
DO - 10.1093/ietele/e91-c.8.1379
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.
ER -
English
