Thin Package of LSI by Transferred Bump TAB Technology
Summary :
In the transferred bump TAB (Tape Automated Bonding) technology, the bumps are transferred on the film leads, and these bumps and the aluminum electrode of an LSI chip are gang-bonded together. This technology make possible a compact semiconductor package of low cost and high reliability. In this technology, the bump formation technology and the substrate technology for the bump formation and the bonding technology contribute to its important element technology. In this treatise, the substrate technology for the bump formation and the bump formation technology corresponding to multielectrodes transferred bump TAB package will be addressed. In addition, an application for TAB package of 100 µm pitch, 444-pin will be presented.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.8 pp.2349-2354
- Publication Date
- 1991/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Packaging Technology for Microelectronics Manufacturing)
- Category
- Interconnection
Authors
Keyword
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Tetsuo KAWAKITA, Kenzo HATADA, "Thin Package of LSI by Transferred Bump TAB Technology" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 8, pp. 2349-2354, August 1991, doi: .
Abstract: In the transferred bump TAB (Tape Automated Bonding) technology, the bumps are transferred on the film leads, and these bumps and the aluminum electrode of an LSI chip are gang-bonded together. This technology make possible a compact semiconductor package of low cost and high reliability. In this technology, the bump formation technology and the substrate technology for the bump formation and the bonding technology contribute to its important element technology. In this treatise, the substrate technology for the bump formation and the bump formation technology corresponding to multielectrodes transferred bump TAB package will be addressed. In addition, an application for TAB package of 100 µm pitch, 444-pin will be presented.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_8_2349/_p
Copy
@ARTICLE{e74-c_8_2349,
author={Tetsuo KAWAKITA, Kenzo HATADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thin Package of LSI by Transferred Bump TAB Technology},
year={1991},
volume={E74-C},
number={8},
pages={2349-2354},
abstract={In the transferred bump TAB (Tape Automated Bonding) technology, the bumps are transferred on the film leads, and these bumps and the aluminum electrode of an LSI chip are gang-bonded together. This technology make possible a compact semiconductor package of low cost and high reliability. In this technology, the bump formation technology and the substrate technology for the bump formation and the bonding technology contribute to its important element technology. In this treatise, the substrate technology for the bump formation and the bump formation technology corresponding to multielectrodes transferred bump TAB package will be addressed. In addition, an application for TAB package of 100 µm pitch, 444-pin will be presented.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Thin Package of LSI by Transferred Bump TAB Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 2349
EP - 2354
AU - Tetsuo KAWAKITA
AU - Kenzo HATADA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1991
AB - In the transferred bump TAB (Tape Automated Bonding) technology, the bumps are transferred on the film leads, and these bumps and the aluminum electrode of an LSI chip are gang-bonded together. This technology make possible a compact semiconductor package of low cost and high reliability. In this technology, the bump formation technology and the substrate technology for the bump formation and the bonding technology contribute to its important element technology. In this treatise, the substrate technology for the bump formation and the bump formation technology corresponding to multielectrodes transferred bump TAB package will be addressed. In addition, an application for TAB package of 100 µm pitch, 444-pin will be presented.
ER -
English
