Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures

Peter PICHLER; Rainer SCHORK; Thomas KLAUSER; Heiner RYSSEL

Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures

Peter PICHLER, Rainer SCHORK, Thomas KLAUSER, Heiner RYSSEL

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In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion implantation at high temperatures allows the time-resolved study of implantation-enhanced diffusion. During the process, point defects are generated by the ion implantation and consumed by recombination in the bulk as well as by diffusion to the surface and recombination there. With increasing temperatures, the recombination of point defects, which are acting as diffusion vehicles, results in reduced effective diffusion. Profiles processed above 900 show marked uphill diffusion at the surface caused by large gradients of the point defect concentrations. This uphill diffusion affirms the generally accepted pair diffusion theories. Since the point defects are in steady state even after process times which are short compared to the total process time, we are able to give a qualitative analysis of the dose dependence of the diffusion. By extensive numerical simulations, we could estimate the product of bulk recombination rate and equilibrium concentrations of self-interstitials and vacancies as well as the interface recombination velocity for the self-interstitials. The results obtained are in qualitative agreement with previous work of others. The results demonstrate, in fact, clearly the advantages of the method presented. But due to experimental problems concerning the temperature measurement, which have not been fully resolved up to now, the results have to be considered as crude estimates.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.128-137

Publication Date: 1992/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)

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Peter PICHLER, Rainer SCHORK, Thomas KLAUSER, Heiner RYSSEL, "Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 2, pp. 128-137, February 1992, doi: .
Abstract: In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion implantation at high temperatures allows the time-resolved study of implantation-enhanced diffusion. During the process, point defects are generated by the ion implantation and consumed by recombination in the bulk as well as by diffusion to the surface and recombination there. With increasing temperatures, the recombination of point defects, which are acting as diffusion vehicles, results in reduced effective diffusion. Profiles processed above 900 show marked uphill diffusion at the surface caused by large gradients of the point defect concentrations. This uphill diffusion affirms the generally accepted pair diffusion theories. Since the point defects are in steady state even after process times which are short compared to the total process time, we are able to give a qualitative analysis of the dose dependence of the diffusion. By extensive numerical simulations, we could estimate the product of bulk recombination rate and equilibrium concentrations of self-interstitials and vacancies as well as the interface recombination velocity for the self-interstitials. The results obtained are in qualitative agreement with previous work of others. The results demonstrate, in fact, clearly the advantages of the method presented. But due to experimental problems concerning the temperature measurement, which have not been fully resolved up to now, the results have to be considered as crude estimates.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_128/_p

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@ARTICLE{e75-c_2_128,
author={Peter PICHLER, Rainer SCHORK, Thomas KLAUSER, Heiner RYSSEL, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures},
year={1992},
volume={E75-C},
number={2},
pages={128-137},
abstract={In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion implantation at high temperatures allows the time-resolved study of implantation-enhanced diffusion. During the process, point defects are generated by the ion implantation and consumed by recombination in the bulk as well as by diffusion to the surface and recombination there. With increasing temperatures, the recombination of point defects, which are acting as diffusion vehicles, results in reduced effective diffusion. Profiles processed above 900 show marked uphill diffusion at the surface caused by large gradients of the point defect concentrations. This uphill diffusion affirms the generally accepted pair diffusion theories. Since the point defects are in steady state even after process times which are short compared to the total process time, we are able to give a qualitative analysis of the dose dependence of the diffusion. By extensive numerical simulations, we could estimate the product of bulk recombination rate and equilibrium concentrations of self-interstitials and vacancies as well as the interface recombination velocity for the self-interstitials. The results obtained are in qualitative agreement with previous work of others. The results demonstrate, in fact, clearly the advantages of the method presented. But due to experimental problems concerning the temperature measurement, which have not been fully resolved up to now, the results have to be considered as crude estimates.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
T2 - IEICE TRANSACTIONS on Electronics
SP - 128
EP - 137
AU - Peter PICHLER
AU - Rainer SCHORK
AU - Thomas KLAUSER
AU - Heiner RYSSEL
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion implantation at high temperatures allows the time-resolved study of implantation-enhanced diffusion. During the process, point defects are generated by the ion implantation and consumed by recombination in the bulk as well as by diffusion to the surface and recombination there. With increasing temperatures, the recombination of point defects, which are acting as diffusion vehicles, results in reduced effective diffusion. Profiles processed above 900 show marked uphill diffusion at the surface caused by large gradients of the point defect concentrations. This uphill diffusion affirms the generally accepted pair diffusion theories. Since the point defects are in steady state even after process times which are short compared to the total process time, we are able to give a qualitative analysis of the dose dependence of the diffusion. By extensive numerical simulations, we could estimate the product of bulk recombination rate and equilibrium concentrations of self-interstitials and vacancies as well as the interface recombination velocity for the self-interstitials. The results obtained are in qualitative agreement with previous work of others. The results demonstrate, in fact, clearly the advantages of the method presented. But due to experimental problems concerning the temperature measurement, which have not been fully resolved up to now, the results have to be considered as crude estimates.
ER -