A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.

All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.

The implant-anneal cycle for B doping during Si device fabrication causes transient enhanced diffusion (TED) of B and the formation of small immobile B-interstitial clusters (BICs) which deactivate the B. Additionally, since modern ultrashallow devices put most of the B in immediate proximity of the Si/SiO2 interface, interface-dopant interactions like segregation become increasingly important. In this work, we use density-functional theory calculations to study TED, clustering, and segregation of B during annealing and discuss a continuum model which combines the TED and clustering results.

We developed a method for analysis of boron penetration and gate depletion using N+ and P+ dual-gate PMOSFETs. An N+ gate PMOSFETs, which is immune to boron penetration and gate depletion, exhibited the threshold voltage shifts and fluctuation in P+ gate PMOSFETs fabricated using identical N- substrates. We showed the importance of Vth fluctuation analysis and found that the Vth fluctuation in N+ gate PMOSFETs was negligible, but, the Vth fluctuation in P+ gate PMOSFETs was significant, indicating that the Vth fluctuation in P+ gate PMOSFETs was dominated by boron penetration. It was also shown, for the first time, that boron penetration occurred with gate depletion, and gate depletion must be very strong to suppress boron penetration. The dual-gate PMOSFET method makes it possible to select high-performance G-bit DRAM fabrication processes that are robust against Vth fluctuation.

A tunable optical Fabry-Perrot filter was designed by setting a single-mode optical fiber normal to the diaphragm of a capacitive pressure sensor. The silicon diaphragm is deflected by the electrostatic force generated by applying a voltage to the capacitive electrodes. According to the movement of the diaphragm, the peak wavelength changed from 1546 to 1551 nm when applied voltage was increased from 20 to 50 V. The relationship of the wavelength change to the applied voltage was derived from the silicon diaphragm deflection theory. That measured change of the wavelength agrees well with the wavelength change calculated from this relationship. The commercial pressure sensors are expected to be able to be used as a tunable optical filter.

Surface-channel PMOSFETs are suitable for use in the quarter micron CMOS devices. For surface-channel PMOSFETs with p+ poly-Si gates, boron penetration and hot-carrier effects were investigated. When the annealing temperature is higher and the gate oxide is thinner, a larger threshold voltage shift was observed for p+ poly-Si PMOSFETs, because of boron penetration. Furthermore, PMOSFETs with BF2-implanted gates cause larger boron penetration than those with Boron-implanted gates. Howerer, the PMOSFET lifetime, determined by hot-carrier reliability, does not depend on the degree of boron penetration. Instead, it depends on doping species, that is, BF2 and Boron. PMOSFETs with BF2-implanted gates have about 100 times longer lifetime than those with Boron-implanted gates. The main reason for the longer lifetime of BF2-doped PMOSFETs is the incorporation of fluorine in the gate oxide of the PMOSFET with the BF2-implanted gate, resulting in the smaller electron trapping in the gate oxide. The maximun allowed supply voltage,based on the hot-carrier reliability, is higher than4V for sub-half micron PMOSFETs with BF2- or Boron-implanted poly Si gates.

In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion implantation at high temperatures allows the time-resolved study of implantation-enhanced diffusion. During the process, point defects are generated by the ion implantation and consumed by recombination in the bulk as well as by diffusion to the surface and recombination there. With increasing temperatures, the recombination of point defects, which are acting as diffusion vehicles, results in reduced effective diffusion. Profiles processed above 900 show marked uphill diffusion at the surface caused by large gradients of the point defect concentrations. This uphill diffusion affirms the generally accepted pair diffusion theories. Since the point defects are in steady state even after process times which are short compared to the total process time, we are able to give a qualitative analysis of the dose dependence of the diffusion. By extensive numerical simulations, we could estimate the product of bulk recombination rate and equilibrium concentrations of self-interstitials and vacancies as well as the interface recombination velocity for the self-interstitials. The results obtained are in qualitative agreement with previous work of others. The results demonstrate, in fact, clearly the advantages of the method presented. But due to experimental problems concerning the temperature measurement, which have not been fully resolved up to now, the results have to be considered as crude estimates.