IEICE TRANSACTIONS on Electronics
Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
Summary :
Surface-channel PMOSFETs are suitable for use in the quarter micron CMOS devices. For surface-channel PMOSFETs with p+ poly-Si gates, boron penetration and hot-carrier effects were investigated. When the annealing temperature is higher and the gate oxide is thinner, a larger threshold voltage shift was observed for p+ poly-Si PMOSFETs, because of boron penetration. Furthermore, PMOSFETs with BF2-implanted gates cause larger boron penetration than those with Boron-implanted gates. Howerer, the PMOSFET lifetime, determined by hot-carrier reliability, does not depend on the degree of boron penetration. Instead, it depends on doping species, that is, BF2 and Boron. PMOSFETs with BF2-implanted gates have about 100 times longer lifetime than those with Boron-implanted gates. The main reason for the longer lifetime of BF2-doped PMOSFETs is the incorporation of fluorine in the gate oxide of the PMOSFET with the BF2-implanted gate, resulting in the smaller electron trapping in the gate oxide. The maximun allowed supply voltage,based on the hot-carrier reliability, is higher than
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E78-C No.3 pp.255-260
- Publication Date
- 1995/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Tohru MOGAMI, Lars E. G. JOHANSSON, Isami SAKAI, Masao FUKUMA, "Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 3, pp. 255-260, March 1995, doi: .
Abstract: Surface-channel PMOSFETs are suitable for use in the quarter micron CMOS devices. For surface-channel PMOSFETs with p+ poly-Si gates, boron penetration and hot-carrier effects were investigated. When the annealing temperature is higher and the gate oxide is thinner, a larger threshold voltage shift was observed for p+ poly-Si PMOSFETs, because of boron penetration. Furthermore, PMOSFETs with BF2-implanted gates cause larger boron penetration than those with Boron-implanted gates. Howerer, the PMOSFET lifetime, determined by hot-carrier reliability, does not depend on the degree of boron penetration. Instead, it depends on doping species, that is, BF2 and Boron. PMOSFETs with BF2-implanted gates have about 100 times longer lifetime than those with Boron-implanted gates. The main reason for the longer lifetime of BF2-doped PMOSFETs is the incorporation of fluorine in the gate oxide of the PMOSFET with the BF2-implanted gate, resulting in the smaller electron trapping in the gate oxide. The maximun allowed supply voltage,based on the hot-carrier reliability, is higher than
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_3_255/_p
Copy
@ARTICLE{e78-c_3_255,
author={Tohru MOGAMI, Lars E. G. JOHANSSON, Isami SAKAI, Masao FUKUMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates},
year={1995},
volume={E78-C},
number={3},
pages={255-260},
abstract={Surface-channel PMOSFETs are suitable for use in the quarter micron CMOS devices. For surface-channel PMOSFETs with p+ poly-Si gates, boron penetration and hot-carrier effects were investigated. When the annealing temperature is higher and the gate oxide is thinner, a larger threshold voltage shift was observed for p+ poly-Si PMOSFETs, because of boron penetration. Furthermore, PMOSFETs with BF2-implanted gates cause larger boron penetration than those with Boron-implanted gates. Howerer, the PMOSFET lifetime, determined by hot-carrier reliability, does not depend on the degree of boron penetration. Instead, it depends on doping species, that is, BF2 and Boron. PMOSFETs with BF2-implanted gates have about 100 times longer lifetime than those with Boron-implanted gates. The main reason for the longer lifetime of BF2-doped PMOSFETs is the incorporation of fluorine in the gate oxide of the PMOSFET with the BF2-implanted gate, resulting in the smaller electron trapping in the gate oxide. The maximun allowed supply voltage,based on the hot-carrier reliability, is higher than
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
T2 - IEICE TRANSACTIONS on Electronics
SP - 255
EP - 260
AU - Tohru MOGAMI
AU - Lars E. G. JOHANSSON
AU - Isami SAKAI
AU - Masao FUKUMA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1995
AB - Surface-channel PMOSFETs are suitable for use in the quarter micron CMOS devices. For surface-channel PMOSFETs with p+ poly-Si gates, boron penetration and hot-carrier effects were investigated. When the annealing temperature is higher and the gate oxide is thinner, a larger threshold voltage shift was observed for p+ poly-Si PMOSFETs, because of boron penetration. Furthermore, PMOSFETs with BF2-implanted gates cause larger boron penetration than those with Boron-implanted gates. Howerer, the PMOSFET lifetime, determined by hot-carrier reliability, does not depend on the degree of boron penetration. Instead, it depends on doping species, that is, BF2 and Boron. PMOSFETs with BF2-implanted gates have about 100 times longer lifetime than those with Boron-implanted gates. The main reason for the longer lifetime of BF2-doped PMOSFETs is the incorporation of fluorine in the gate oxide of the PMOSFET with the BF2-implanted gate, resulting in the smaller electron trapping in the gate oxide. The maximun allowed supply voltage,based on the hot-carrier reliability, is higher than
ER -
English
