Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation
Summary :
A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.4 pp.474-480
- Publication Date
- 2016/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.474
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Akira HEYA
University of Hyogo
Naoto MATSUO
University of Hyogo
Kazuhiro KANDA
University of Hyogo
Keyword
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Akira HEYA, Naoto MATSUO, Kazuhiro KANDA, "Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 4, pp. 474-480, April 2016, doi: 10.1587/transele.E99.C.474.
Abstract: A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.474/_p
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@ARTICLE{e99-c_4_474,
author={Akira HEYA, Naoto MATSUO, Kazuhiro KANDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation},
year={2016},
volume={E99-C},
number={4},
pages={474-480},
abstract={A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.},
keywords={},
doi={10.1587/transele.E99.C.474},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation
T2 - IEICE TRANSACTIONS on Electronics
SP - 474
EP - 480
AU - Akira HEYA
AU - Naoto MATSUO
AU - Kazuhiro KANDA
PY - 2016
DO - 10.1587/transele.E99.C.474
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2016
AB - A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.
ER -
English
