IEICE TRANSACTIONS on Electronics
All MgB2 Josephson Junctions with Amorphous Boron Barriers
Summary :
All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.4 pp.468-472
- Publication Date
- 2010/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.468
- Type of Manuscript
- Special Section PAPER (Special Section on Frontiers of Superconductive Electronics)
- Category
- Junctions
Authors
Naoki MITAMURA
Chikaze MARUYAMA
Hiroyuki AKAIKE
Akira FUJIMAKI
Rintaro ISHII
Yoshihiro NIIHARA
Michio NAITO
Keyword
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Naoki MITAMURA, Chikaze MARUYAMA, Hiroyuki AKAIKE, Akira FUJIMAKI, Rintaro ISHII, Yoshihiro NIIHARA, Michio NAITO, "All MgB2 Josephson Junctions with Amorphous Boron Barriers" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 4, pp. 468-472, April 2010, doi: 10.1587/transele.E93.C.468.
Abstract: All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.468/_p
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@ARTICLE{e93-c_4_468,
author={Naoki MITAMURA, Chikaze MARUYAMA, Hiroyuki AKAIKE, Akira FUJIMAKI, Rintaro ISHII, Yoshihiro NIIHARA, Michio NAITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={All MgB2 Josephson Junctions with Amorphous Boron Barriers},
year={2010},
volume={E93-C},
number={4},
pages={468-472},
abstract={All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.},
keywords={},
doi={10.1587/transele.E93.C.468},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - All MgB2 Josephson Junctions with Amorphous Boron Barriers
T2 - IEICE TRANSACTIONS on Electronics
SP - 468
EP - 472
AU - Naoki MITAMURA
AU - Chikaze MARUYAMA
AU - Hiroyuki AKAIKE
AU - Akira FUJIMAKI
AU - Rintaro ISHII
AU - Yoshihiro NIIHARA
AU - Michio NAITO
PY - 2010
DO - 10.1587/transele.E93.C.468
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2010
AB - All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.
ER -
English
