All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.

We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB2 toward superconducting electronics. The most serious problem in the thin film synthesis of MgB2 is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB2 in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB2 films with Tc 35 K. Furthermore, technology to produce single-crystal epitaxial MgB2 films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB2 has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.