The search functionality is under construction.
The search functionality is under construction.

A 576K 3.5-ns Access BiCMOS ECL Static RAM with Array Built-in Self-Test

Henry A. BONGES,, R. Dean ADAMS, Archibald J. ALLEN, Roy FLAKER, Kenneth S. GRAY, Erik L. HEDBERG, W. Timothy HOLMAN, George M. LATTIMORE, David A. LAVALETTE, Kim Yen T. NGUYEN, Alan L. ROBERTS

  • Full Text Views

    0

  • Cite this

Summary :

An experimental 576K BiCMOS ECL-compatible SRAM that achieves 3.5-ns access and cycle is discussed. The SRAM is fully self-testable using less than 1K on-chip logic gates to assist characterization, wafer test, and package test. The I/O is also TTL programmable with the first-metal mask.

Publication
IEICE TRANSACTIONS on Electronics Vol.E75-C No.4 pp.547-554
Publication Date
1992/04/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
Category

Authors

Keyword