Influence of Vacancy in Silicon Wafer of Various Types on Surface Microroughness in Wet Chemical Process

Tadahiro OHMI; Toshihito TSUGA; Jun TAKANO; Masahiko KOGURE; Koji MAKIHARA; Takayuki IMAOKA

Influence of Vacancy in Silicon Wafer of Various Types on Surface Microroughness in Wet Chemical Process

Tadahiro OHMI, Toshihito TSUGA, Jun TAKANO, Masahiko KOGURE, Koji MAKIHARA, Takayuki IMAOKA

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The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (E_BD) and charge to break-down (Q_BD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH₄OH-H₂O₂-H₂O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH₄OH mixing ratio in NH₄OH-H₂O₂-H₂O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH₄OH-H₂O₂-H₂O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.800-808

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Tadahiro OHMI, Toshihito TSUGA, Jun TAKANO, Masahiko KOGURE, Koji MAKIHARA, Takayuki IMAOKA, "Influence of Vacancy in Silicon Wafer of Various Types on Surface Microroughness in Wet Chemical Process" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 800-808, July 1992, doi: .
Abstract: The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (E_BD) and charge to break-down (Q_BD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH₄OH-H₂O₂-H₂O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH₄OH mixing ratio in NH₄OH-H₂O₂-H₂O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH₄OH-H₂O₂-H₂O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_800/_p

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@ARTICLE{e75-c_7_800,
author={Tadahiro OHMI, Toshihito TSUGA, Jun TAKANO, Masahiko KOGURE, Koji MAKIHARA, Takayuki IMAOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influence of Vacancy in Silicon Wafer of Various Types on Surface Microroughness in Wet Chemical Process},
year={1992},
volume={E75-C},
number={7},
pages={800-808},
abstract={The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (E_BD) and charge to break-down (Q_BD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH₄OH-H₂O₂-H₂O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH₄OH mixing ratio in NH₄OH-H₂O₂-H₂O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH₄OH-H₂O₂-H₂O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Influence of Vacancy in Silicon Wafer of Various Types on Surface Microroughness in Wet Chemical Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 800
EP - 808
AU - Tadahiro OHMI
AU - Toshihito TSUGA
AU - Jun TAKANO
AU - Masahiko KOGURE
AU - Koji MAKIHARA
AU - Takayuki IMAOKA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (E_BD) and charge to break-down (Q_BD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH₄OH-H₂O₂-H₂O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH₄OH mixing ratio in NH₄OH-H₂O₂-H₂O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH₄OH-H₂O₂-H₂O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.
ER -