Minimizing the residual impurity gases is a key factor for reducing temporal dark image sticking. Therefore, this paper uses a vacuum-sealing method that minimizes the residual impurity gases by enhancing the base vacuum level, and the resultant change in temporal dark image sticking is then examined in comparison to that with the conventional sealing method using 42-in. ac-PDPs with a high Xe (11%) content. As a result of monitoring the difference in the display luminance, infrared emission, and perceived luminance between the cells with and without temporal dark image sticking, the vacuum-sealing method is demonstrated to reduce temporal dark image sticking by decreasing the residual impurity gases and increasing the oxygen vacancy in the MgO layer. Furthermore, the use of a modified driving waveform along with the vacuum-sealing method is even more effective in reducing temporal dark image sticking.

The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO2 films is described. Assuming a two-step trap-assisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-path of hole in SiO2 films and an atomic structure of the trap site by the O vacancy model.

We determine the annealing dynamics of AsGa antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy EPA, which is different from true activation energy. The annealing time dependence of EPA obtained by the two diffusion models (self diffusion of AsGa antisite defects and VGa vacancy assisted diffusion of AsGa antisite defects) are compared with EPA's obtained from already published works. The results prove that the diffusion of AsGa antisite defects is assisted by the VGa vacancy defects that exist in a high density.

Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.

Almost stoichiometric YBa2Cu3O7-δ(110) or (103) and SrTiOx(110) films, and multilayer films consisting of them have successfully been grown epitaxially on hot SrTiO3 substrates by 90off-axis rf magnetron sputtering with facing targets. Their whole composition, compositional distribution in depth, crystallinity and surface morphology were examined by inductively coupled plasma spectroscopy, Auger electron spectroscopy, reflection high-energy electron diffraction, and scanning tunneling microscopy or atomic force microscope, respectively. When any YBa2Cu3O7-δ film was exposed to air after deposition, a Ba-rich layer was formed in a near surface region of the film. However, such a compositional distribution in depth of the film was improved by in situ deposition of a SrTiOx film on it. Moreover, the surface roughness of the YBa2Cu3O7-δ film was improved by predeposition of a SrTiOx film under it. On the basis of these results, both YBa2Cu3O7-δ/SrTiOx/YBa2Cu3O7-δ/SrTiO3(sub.) and YBa2Cu3O7-δ/SrTiOx/YBa2Cu3O7-δ/SrTiOx/SrTiO3(sub.) multilayer films with average surface roughness of 3 nm were grown reproducibly, which had uniform compositional distribution throughout the depth of the film except a near surface region of the top YBa2Cu3O7-δ layer. A new 222 structure described by Sr8Ti8O20 (Sr2Ti2O5) with a long range ordered arrangement of oxygen vacancies was formed in the SrTiOx films deposited epitaxially on YBa2Cu3O7-δ films.

The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (EBD) and charge to break-down (QBD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH4OH-H2O2-H2O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH4OH mixing ratio in NH4OH-H2O2-H2O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH4OH-H2O2-H2O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.