Modeling of Dopant Diffusion in Silicon
Summary :
Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.6 pp.800-812
- Publication Date
- 1999/06/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
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Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, "Modeling of Dopant Diffusion in Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 800-812, June 1999, doi: .
Abstract: Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_800/_p
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@ARTICLE{e82-c_6_800,
author={Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Dopant Diffusion in Silicon},
year={1999},
volume={E82-C},
number={6},
pages={800-812},
abstract={Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - Modeling of Dopant Diffusion in Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 800
EP - 812
AU - Scott T. DUNHAM
AU - Alp H. GENCER
AU - Srinivasan CHAKRAVARTHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
ER -
English
