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[Keyword] interstitial(5hit)

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  • Numerical Simulation for Interstitial Heating of Actual Neck Tumor Based on MRI Tomograms by Using a Coaxial-Slot Antenna

    Kazuyuki SAITO  Hiroyuki YOSHIMURA  Koichi ITO  

     
    PAPER-Medical Application

      Vol:
    E86-C No:12
      Page(s):
    2482-2487

    Hyperthermia is one of the modalities for cancer treatment, utilizing the difference of thermal sensitivity between tumor and normal tissue. In this treatment, the tumor or target cancer cell is heated up to the therapeutic temperature between 42 and 45 without overheating the surrounding normal tissues. Particularly, the authors have been studying the coaxial-slot antenna for interstitial microwave hyperthermia. At that time, we analyzed the heating characteristics of the coaxial-slot antenna under the assumption that the human body is a homogeneous medium. In this paper, we analyzed the heating characteristics of the coaxial-slot antenna inside an actual neck tumor by using numerical calculations. The models of calculations consist of MRI tomograms of an actual patient. As a result of the calculations, we observed almost uniform temperature distributions inside the human body including the actual neck tumor, which are similar to the results obtained for a homogeneous medium.

  • Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage

    Masami HANE  Takeo IKEZAWA  Akio FURUKAWA  

     
    PAPER-Process Modeling and Simulation

      Vol:
    E83-C No:8
      Page(s):
    1247-1252

    Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. In addition with calculating the diffusion constant, we also identified its migration pathway and barrier energy in the case of Stillinger-Weber potential. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily disappears. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.

  • Modeling of Dopant Diffusion in Silicon

    Scott T. DUNHAM  Alp H. GENCER  Srinivasan CHAKRAVARTHI  

     
    INVITED PAPER

      Vol:
    E82-C No:6
      Page(s):
    800-812

    Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.

  • Basic Analysis on SAR Distribution of Coaxial-Slot Antenna Array for Interstitial Microwave Hyperthermia

    Lira HAMADA  Meng-Shien WU  Koichi ITO  Haruo KASAI  

     
    PAPER-Microwave and Millimeter Wave Technology

      Vol:
    E78-C No:11
      Page(s):
    1624-1631

    The interstitial hyperthermia is an invasive heating method applied by inserting the applicator into the human body. We have been studying on coaxial-slot antennas for interstitial microwave hyperthermia. The characteristics of the square antenna array were theoretically examined. Firstly, the basic structure of the antenna, and a simplified analysis model taking account of the effect of the boundary surface were explained. Then analysis was performed by using the moment method. Finally, the calculated results were discussed. The catheter thickness has much effect on the characteristics and must be considered both in designing and in using the antenna. When the array spacing was increased, the effective heating area became larger and more uniform. As the insertion depth was increased, the effective heating area was also enlarged.

  • Effect of a Catheter on SAR Distribution around Interstitial Antenna for Microwave Hyperthermia

    Meng-Shien WU  Lira HAMADA  Koichi ITO  Haruo KASAI  

     
    PAPER

      Vol:
    E78-B No:6
      Page(s):
    845-850

    This paper describes that the dielectric characteristics of a catheter around the interstitial antenna have an effect on the wavelength for current, and this effect results in the variation of the SAR (Specific Absorption Rate) distribution around the antenna. A theoretical study of SAR distribution ground a coaxial-slot antenna is performed. Analytical technique used is the moment method. Result and discussion on the effect of material and thickness of the catheter are presented. The wavelength for the current shortens with increasing dielectric constant or decreasing thickness of the catheter. Due to this variation of the wavelength for current, the SAR distributions take various shapes.