Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application

Yasuyuki SUZUKI; Hikaru HIDA; Tetsuyuki SUZAKI; Sadao FUJITA; Akihiko OKAMOTO

Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application

Yasuyuki SUZUKI, Hikaru HIDA, Tetsuyuki SUZAKI, Sadao FUJITA, Akihiko OKAMOTO

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Recessed-gate DMTs (doped-channel hetero-MISFETs) with i-AlGaAs/n-GaAs structure and pseudomorphic i-AlGaAs/n-InGaAs/i-GaAs structure have been developed. Broad plateaus in g_m and f_T provide evidence that the DMTs make the devices suitable for high-speed large-signal operation. GaAs DMTs with 0.35 µm-length have gate turn on voltage of 0.7 V, maximum transconductance of 320 mS/mm and f_T of 41 GHz. Pseudomorphic DMTs have gate turn on voltage of 0.9 V, maximum transconductance of 320 mS/mm, f_T of 42 GHz and have the enhanced advantages of high current drivability and large gate swing. Further more, with the use of the recessed-gate DMTs, a high-speed laser driver IC for multi-Gb/s optical communication systems are demonstrated. This laser driver IC operates at 10 Gb/s with rise and fall times as fast as 40 psec, and it can drive up to 60 mA into a 25 Ω load.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.6 pp.907-911

Publication Date: 1993/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)

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Yasuyuki SUZUKI, Hikaru HIDA, Tetsuyuki SUZAKI, Sadao FUJITA, Akihiko OKAMOTO, "Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 6, pp. 907-911, June 1993, doi: .
Abstract: Recessed-gate DMTs (doped-channel hetero-MISFETs) with i-AlGaAs/n-GaAs structure and pseudomorphic i-AlGaAs/n-InGaAs/i-GaAs structure have been developed. Broad plateaus in g_m and f_T provide evidence that the DMTs make the devices suitable for high-speed large-signal operation. GaAs DMTs with 0.35 µm-length have gate turn on voltage of 0.7 V, maximum transconductance of 320 mS/mm and f_T of 41 GHz. Pseudomorphic DMTs have gate turn on voltage of 0.9 V, maximum transconductance of 320 mS/mm, f_T of 42 GHz and have the enhanced advantages of high current drivability and large gate swing. Further more, with the use of the recessed-gate DMTs, a high-speed laser driver IC for multi-Gb/s optical communication systems are demonstrated. This laser driver IC operates at 10 Gb/s with rise and fall times as fast as 40 psec, and it can drive up to 60 mA into a 25 Ω load.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_6_907/_p

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@ARTICLE{e76-c_6_907,
author={Yasuyuki SUZUKI, Hikaru HIDA, Tetsuyuki SUZAKI, Sadao FUJITA, Akihiko OKAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application},
year={1993},
volume={E76-C},
number={6},
pages={907-911},
abstract={Recessed-gate DMTs (doped-channel hetero-MISFETs) with i-AlGaAs/n-GaAs structure and pseudomorphic i-AlGaAs/n-InGaAs/i-GaAs structure have been developed. Broad plateaus in g_m and f_T provide evidence that the DMTs make the devices suitable for high-speed large-signal operation. GaAs DMTs with 0.35 µm-length have gate turn on voltage of 0.7 V, maximum transconductance of 320 mS/mm and f_T of 41 GHz. Pseudomorphic DMTs have gate turn on voltage of 0.9 V, maximum transconductance of 320 mS/mm, f_T of 42 GHz and have the enhanced advantages of high current drivability and large gate swing. Further more, with the use of the recessed-gate DMTs, a high-speed laser driver IC for multi-Gb/s optical communication systems are demonstrated. This laser driver IC operates at 10 Gb/s with rise and fall times as fast as 40 psec, and it can drive up to 60 mA into a 25 Ω load.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Recessed-Gate Doped-Channel Hetero-MISFETs (DMTs) for High-Speed Laser Driver IC Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 907
EP - 911
AU - Yasuyuki SUZUKI
AU - Hikaru HIDA
AU - Tetsuyuki SUZAKI
AU - Sadao FUJITA
AU - Akihiko OKAMOTO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1993
AB - Recessed-gate DMTs (doped-channel hetero-MISFETs) with i-AlGaAs/n-GaAs structure and pseudomorphic i-AlGaAs/n-InGaAs/i-GaAs structure have been developed. Broad plateaus in g_m and f_T provide evidence that the DMTs make the devices suitable for high-speed large-signal operation. GaAs DMTs with 0.35 µm-length have gate turn on voltage of 0.7 V, maximum transconductance of 320 mS/mm and f_T of 41 GHz. Pseudomorphic DMTs have gate turn on voltage of 0.9 V, maximum transconductance of 320 mS/mm, f_T of 42 GHz and have the enhanced advantages of high current drivability and large gate swing. Further more, with the use of the recessed-gate DMTs, a high-speed laser driver IC for multi-Gb/s optical communication systems are demonstrated. This laser driver IC operates at 10 Gb/s with rise and fall times as fast as 40 psec, and it can drive up to 60 mA into a 25 Ω load.
ER -