Novel Channel Structures for High Frequency InP-Based HTEFs

Takatomo ENOKI; Kunihiro ARAI; Tatsushi AKAZAKI; Yasunobu ISHII

Novel Channel Structures for High Frequency InP-Based HTEFs

Takatomo ENOKI, Kunihiro ARAI, Tatsushi AKAZAKI, Yasunobu ISHII

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We discuss delay times derived from the current gain cutoff frequency of a heterostructure field effect transistor and describe three types of novel channel structures for millimeter-wave InP-based HFETs. The first structure discussed is a lattice-matched InGaAs HEMT with high state-of-the art performance. The second structure is an InAs-inserted InGaAs HEMT which harnesses the superior transport properties of InAs. Fabricated devices show high electron mobility of 12,800 cm²/Vs and high transconductance over 1.4 S/mm for a 0.6-µm-gate length. The effective saturation velocity in the device derived from the current gain cutoff frequency in 3.010⁷ cm/s. The third one is an InGaAs/InP double-channel HFET that utilizes the superior transport properties of InP at a high electric field. Fabricated double-channel devices show kink-free characteristics, high carrier density of 4.510¹² cm^-2 and high transconductance of 1.3 S/mm for a 0.6-µm-gate length. The estimated effective saturation velocity in these devices is 4.210⁷ cm/s. Also included is a discussion of the current gain cutoff frequency of ultra-short channel devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.9 pp.1402-1411

Publication Date: 1993/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices)

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Takatomo ENOKI, Kunihiro ARAI, Tatsushi AKAZAKI, Yasunobu ISHII, "Novel Channel Structures for High Frequency InP-Based HTEFs" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 9, pp. 1402-1411, September 1993, doi: .
Abstract: We discuss delay times derived from the current gain cutoff frequency of a heterostructure field effect transistor and describe three types of novel channel structures for millimeter-wave InP-based HFETs. The first structure discussed is a lattice-matched InGaAs HEMT with high state-of-the art performance. The second structure is an InAs-inserted InGaAs HEMT which harnesses the superior transport properties of InAs. Fabricated devices show high electron mobility of 12,800 cm²/Vs and high transconductance over 1.4 S/mm for a 0.6-µm-gate length. The effective saturation velocity in the device derived from the current gain cutoff frequency in 3.010⁷ cm/s. The third one is an InGaAs/InP double-channel HFET that utilizes the superior transport properties of InP at a high electric field. Fabricated double-channel devices show kink-free characteristics, high carrier density of 4.510¹² cm^-2 and high transconductance of 1.3 S/mm for a 0.6-µm-gate length. The estimated effective saturation velocity in these devices is 4.210⁷ cm/s. Also included is a discussion of the current gain cutoff frequency of ultra-short channel devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_9_1402/_p

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@ARTICLE{e76-c_9_1402,
author={Takatomo ENOKI, Kunihiro ARAI, Tatsushi AKAZAKI, Yasunobu ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Channel Structures for High Frequency InP-Based HTEFs},
year={1993},
volume={E76-C},
number={9},
pages={1402-1411},
abstract={We discuss delay times derived from the current gain cutoff frequency of a heterostructure field effect transistor and describe three types of novel channel structures for millimeter-wave InP-based HFETs. The first structure discussed is a lattice-matched InGaAs HEMT with high state-of-the art performance. The second structure is an InAs-inserted InGaAs HEMT which harnesses the superior transport properties of InAs. Fabricated devices show high electron mobility of 12,800 cm²/Vs and high transconductance over 1.4 S/mm for a 0.6-µm-gate length. The effective saturation velocity in the device derived from the current gain cutoff frequency in 3.010⁷ cm/s. The third one is an InGaAs/InP double-channel HFET that utilizes the superior transport properties of InP at a high electric field. Fabricated double-channel devices show kink-free characteristics, high carrier density of 4.510¹² cm^-2 and high transconductance of 1.3 S/mm for a 0.6-µm-gate length. The estimated effective saturation velocity in these devices is 4.210⁷ cm/s. Also included is a discussion of the current gain cutoff frequency of ultra-short channel devices.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Novel Channel Structures for High Frequency InP-Based HTEFs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1402
EP - 1411
AU - Takatomo ENOKI
AU - Kunihiro ARAI
AU - Tatsushi AKAZAKI
AU - Yasunobu ISHII
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1993
AB - We discuss delay times derived from the current gain cutoff frequency of a heterostructure field effect transistor and describe three types of novel channel structures for millimeter-wave InP-based HFETs. The first structure discussed is a lattice-matched InGaAs HEMT with high state-of-the art performance. The second structure is an InAs-inserted InGaAs HEMT which harnesses the superior transport properties of InAs. Fabricated devices show high electron mobility of 12,800 cm²/Vs and high transconductance over 1.4 S/mm for a 0.6-µm-gate length. The effective saturation velocity in the device derived from the current gain cutoff frequency in 3.010⁷ cm/s. The third one is an InGaAs/InP double-channel HFET that utilizes the superior transport properties of InP at a high electric field. Fabricated double-channel devices show kink-free characteristics, high carrier density of 4.510¹² cm^-2 and high transconductance of 1.3 S/mm for a 0.6-µm-gate length. The estimated effective saturation velocity in these devices is 4.210⁷ cm/s. Also included is a discussion of the current gain cutoff frequency of ultra-short channel devices.
ER -