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IEICE TRANSACTIONS on Electronics

Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems

Shirun HO, Aya MORIYOSHI, Isao OHBU, Osamu KAGAYA, Hiroshi MIZUTA, Ken YAMAGUCHI

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Summary :

A new mobility model dependent upon electron concentration is presented for studying the screening effect on ionized impurity scattering. By coupling this model with the drift-diffusion and Hartree models, the effects of self-consistent and quasi-equilibrium screening on carrier transport in heavily doped systems are revealed for first time. The transport mechanism is found to be dominated by the electron-concentration-dependent mobility, and transconductance is shown to be determined by effective mobility and changes from degraded to enhanced characteristics with electron concentration modulation.

Publication
IEICE TRANSACTIONS on Electronics Vol.E77-C No.2 pp.155-160
Publication Date
1994/02/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category
Device Modeling

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