Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding

Takao ABE; Yasuyuki NAKAZATO

Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding

Takao ABE, Yasuyuki NAKAZATO

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Dislocation-free thin silicon layers are created on the three kinds of substrates such as oxide film, synthetic quartz glass and sapphire. They are bonded with silicon wafers using hydrogen bonding at room temperature but without any adhesive, and their bonding are changed into covalent bonding at elevated temperature. Thick (2 µm) silicon layers are first produced by surface grinding and polishing, and then thinned to 0.1 µm by plasma assisted chemical etching (PACE). A multiple repeated process of thinning the silicon layer and annealing the bonded silicon/quartz and silicon/sapphire interface is applied for tight bonding between a silicon wafer and a quartz wafer, and a silicon wafer and a sapphire wafer which have different thermal expansion coefficients. In case of bonding with sapphire, oxide with 200 in thickness plays an important role in the preventions of void formation and diffusion of interface contaminants into the silicon layer.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.342-349

Publication Date: 1994/03/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)

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Takao ABE, Yasuyuki NAKAZATO, "Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 3, pp. 342-349, March 1994, doi: .
Abstract: Dislocation-free thin silicon layers are created on the three kinds of substrates such as oxide film, synthetic quartz glass and sapphire. They are bonded with silicon wafers using hydrogen bonding at room temperature but without any adhesive, and their bonding are changed into covalent bonding at elevated temperature. Thick (2 µm) silicon layers are first produced by surface grinding and polishing, and then thinned to 0.1 µm by plasma assisted chemical etching (PACE). A multiple repeated process of thinning the silicon layer and annealing the bonded silicon/quartz and silicon/sapphire interface is applied for tight bonding between a silicon wafer and a quartz wafer, and a silicon wafer and a sapphire wafer which have different thermal expansion coefficients. In case of bonding with sapphire, oxide with 200 in thickness plays an important role in the preventions of void formation and diffusion of interface contaminants into the silicon layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_342/_p

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@ARTICLE{e77-c_3_342,
author={Takao ABE, Yasuyuki NAKAZATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding},
year={1994},
volume={E77-C},
number={3},
pages={342-349},
abstract={Dislocation-free thin silicon layers are created on the three kinds of substrates such as oxide film, synthetic quartz glass and sapphire. They are bonded with silicon wafers using hydrogen bonding at room temperature but without any adhesive, and their bonding are changed into covalent bonding at elevated temperature. Thick (2 µm) silicon layers are first produced by surface grinding and polishing, and then thinned to 0.1 µm by plasma assisted chemical etching (PACE). A multiple repeated process of thinning the silicon layer and annealing the bonded silicon/quartz and silicon/sapphire interface is applied for tight bonding between a silicon wafer and a quartz wafer, and a silicon wafer and a sapphire wafer which have different thermal expansion coefficients. In case of bonding with sapphire, oxide with 200 in thickness plays an important role in the preventions of void formation and diffusion of interface contaminants into the silicon layer.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding
T2 - IEICE TRANSACTIONS on Electronics
SP - 342
EP - 349
AU - Takao ABE
AU - Yasuyuki NAKAZATO
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - Dislocation-free thin silicon layers are created on the three kinds of substrates such as oxide film, synthetic quartz glass and sapphire. They are bonded with silicon wafers using hydrogen bonding at room temperature but without any adhesive, and their bonding are changed into covalent bonding at elevated temperature. Thick (2 µm) silicon layers are first produced by surface grinding and polishing, and then thinned to 0.1 µm by plasma assisted chemical etching (PACE). A multiple repeated process of thinning the silicon layer and annealing the bonded silicon/quartz and silicon/sapphire interface is applied for tight bonding between a silicon wafer and a quartz wafer, and a silicon wafer and a sapphire wafer which have different thermal expansion coefficients. In case of bonding with sapphire, oxide with 200 in thickness plays an important role in the preventions of void formation and diffusion of interface contaminants into the silicon layer.
ER -