Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)

Yukihiro KIYOTA; Tohru NAKAMURA; Taroh INADA

Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)

Yukihiro KIYOTA, Tohru NAKAMURA, Taroh INADA

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Single-drain PMOSFET's with a very shallow source and drain were fabricated using a new doping method called rapid vapor-phase doping (RVD). This process is carried out in hydrogen atmosphere using B₂H₆ as a source gas. By varying flow rate of B₂H₆ and the doping time, shallow boron doped layers which are suitable for source and drain regions of MOSFET's are formed. The fabricated RVD-PMOSFET's have 50-nm source and drain regions with peak concentration of 410²⁰ cm^-3 which were formed under the condition of 800, B₂H₆ flow rate of 50 ml/min. The junction depth was one third of those formed by conventional low-energy BF₂ ion implantation. RVD-PMOSFET's showed normal operation down to poly-Si gate length L_g of 0.18 µm. The advantage of shallow junction was clearly shown by the threshold voltage roll-off characteristics, that is, it was suppressed down to 0.18 µm, whereas in conventional device, roll-off occurred below 0.6 µm. This better short channel behavior suggests that RVD forms shallow source and drain regions with weaker lateral diffusion. This result confirms that RVD is an effective method for forming shallow junctions for MOSFET's.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.362-366

Publication Date: 1994/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)

Category: Device Technology

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Yukihiro KIYOTA, Tohru NAKAMURA, Taroh INADA, "Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 3, pp. 362-366, March 1994, doi: .
Abstract: Single-drain PMOSFET's with a very shallow source and drain were fabricated using a new doping method called rapid vapor-phase doping (RVD). This process is carried out in hydrogen atmosphere using B₂H₆ as a source gas. By varying flow rate of B₂H₆ and the doping time, shallow boron doped layers which are suitable for source and drain regions of MOSFET's are formed. The fabricated RVD-PMOSFET's have 50-nm source and drain regions with peak concentration of 410²⁰ cm^-3 which were formed under the condition of 800, B₂H₆ flow rate of 50 ml/min. The junction depth was one third of those formed by conventional low-energy BF₂ ion implantation. RVD-PMOSFET's showed normal operation down to poly-Si gate length L_g of 0.18 µm. The advantage of shallow junction was clearly shown by the threshold voltage roll-off characteristics, that is, it was suppressed down to 0.18 µm, whereas in conventional device, roll-off occurred below 0.6 µm. This better short channel behavior suggests that RVD forms shallow source and drain regions with weaker lateral diffusion. This result confirms that RVD is an effective method for forming shallow junctions for MOSFET's.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_362/_p

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@ARTICLE{e77-c_3_362,
author={Yukihiro KIYOTA, Tohru NAKAMURA, Taroh INADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)},
year={1994},
volume={E77-C},
number={3},
pages={362-366},
abstract={Single-drain PMOSFET's with a very shallow source and drain were fabricated using a new doping method called rapid vapor-phase doping (RVD). This process is carried out in hydrogen atmosphere using B₂H₆ as a source gas. By varying flow rate of B₂H₆ and the doping time, shallow boron doped layers which are suitable for source and drain regions of MOSFET's are formed. The fabricated RVD-PMOSFET's have 50-nm source and drain regions with peak concentration of 410²⁰ cm^-3 which were formed under the condition of 800, B₂H₆ flow rate of 50 ml/min. The junction depth was one third of those formed by conventional low-energy BF₂ ion implantation. RVD-PMOSFET's showed normal operation down to poly-Si gate length L_g of 0.18 µm. The advantage of shallow junction was clearly shown by the threshold voltage roll-off characteristics, that is, it was suppressed down to 0.18 µm, whereas in conventional device, roll-off occurred below 0.6 µm. This better short channel behavior suggests that RVD forms shallow source and drain regions with weaker lateral diffusion. This result confirms that RVD is an effective method for forming shallow junctions for MOSFET's.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)
T2 - IEICE TRANSACTIONS on Electronics
SP - 362
EP - 366
AU - Yukihiro KIYOTA
AU - Tohru NAKAMURA
AU - Taroh INADA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - Single-drain PMOSFET's with a very shallow source and drain were fabricated using a new doping method called rapid vapor-phase doping (RVD). This process is carried out in hydrogen atmosphere using B₂H₆ as a source gas. By varying flow rate of B₂H₆ and the doping time, shallow boron doped layers which are suitable for source and drain regions of MOSFET's are formed. The fabricated RVD-PMOSFET's have 50-nm source and drain regions with peak concentration of 410²⁰ cm^-3 which were formed under the condition of 800, B₂H₆ flow rate of 50 ml/min. The junction depth was one third of those formed by conventional low-energy BF₂ ion implantation. RVD-PMOSFET's showed normal operation down to poly-Si gate length L_g of 0.18 µm. The advantage of shallow junction was clearly shown by the threshold voltage roll-off characteristics, that is, it was suppressed down to 0.18 µm, whereas in conventional device, roll-off occurred below 0.6 µm. This better short channel behavior suggests that RVD forms shallow source and drain regions with weaker lateral diffusion. This result confirms that RVD is an effective method for forming shallow junctions for MOSFET's.
ER -