Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--
Summary :
Optical and electrical measurements of thin film n-channel SOI-MOSFETs reveal that the exponential tail in photon emission spectra originates from electron-hole recombination. Bremsstrahlung radiation model as a physical mechanism of photon emission was experimentally negated. Negative threshold voltage shift at the initial stage of high field stress is found to be caused by hole trapping in buried oxide. Subsequent turnover characteristics is explained by a competing process between electron trapping in the front gate oxide and hole trapping in the buried oxide. As to the degradation of transconductance, generated surface state as well as trapped holes in the buried oxide which reduce vertical electric field in SOI film are involved in the complicate degradation of transconductance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.373-378
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Device Technology
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Mitsuru YAMAJI, Kenji TANIGUSHI, Chihiro HAMAGUCHI, Kazuo SUKEGAWA, Seiichiro KAWAMURA, "Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 373-378, March 1994, doi: .
Abstract: Optical and electrical measurements of thin film n-channel SOI-MOSFETs reveal that the exponential tail in photon emission spectra originates from electron-hole recombination. Bremsstrahlung radiation model as a physical mechanism of photon emission was experimentally negated. Negative threshold voltage shift at the initial stage of high field stress is found to be caused by hole trapping in buried oxide. Subsequent turnover characteristics is explained by a competing process between electron trapping in the front gate oxide and hole trapping in the buried oxide. As to the degradation of transconductance, generated surface state as well as trapped holes in the buried oxide which reduce vertical electric field in SOI film are involved in the complicate degradation of transconductance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_373/_p
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@ARTICLE{e77-c_3_373,
author={Mitsuru YAMAJI, Kenji TANIGUSHI, Chihiro HAMAGUCHI, Kazuo SUKEGAWA, Seiichiro KAWAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--},
year={1994},
volume={E77-C},
number={3},
pages={373-378},
abstract={Optical and electrical measurements of thin film n-channel SOI-MOSFETs reveal that the exponential tail in photon emission spectra originates from electron-hole recombination. Bremsstrahlung radiation model as a physical mechanism of photon emission was experimentally negated. Negative threshold voltage shift at the initial stage of high field stress is found to be caused by hole trapping in buried oxide. Subsequent turnover characteristics is explained by a competing process between electron trapping in the front gate oxide and hole trapping in the buried oxide. As to the degradation of transconductance, generated surface state as well as trapped holes in the buried oxide which reduce vertical electric field in SOI film are involved in the complicate degradation of transconductance.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--
T2 - IEICE TRANSACTIONS on Electronics
SP - 373
EP - 378
AU - Mitsuru YAMAJI
AU - Kenji TANIGUSHI
AU - Chihiro HAMAGUCHI
AU - Kazuo SUKEGAWA
AU - Seiichiro KAWAMURA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - Optical and electrical measurements of thin film n-channel SOI-MOSFETs reveal that the exponential tail in photon emission spectra originates from electron-hole recombination. Bremsstrahlung radiation model as a physical mechanism of photon emission was experimentally negated. Negative threshold voltage shift at the initial stage of high field stress is found to be caused by hole trapping in buried oxide. Subsequent turnover characteristics is explained by a competing process between electron trapping in the front gate oxide and hole trapping in the buried oxide. As to the degradation of transconductance, generated surface state as well as trapped holes in the buried oxide which reduce vertical electric field in SOI film are involved in the complicate degradation of transconductance.
ER -
English
