High Speed Electron Beam Cell Projection Exposure System

Yoshihiko OKAMOTO; Norio SAITOU; Haruo YODA; Yoshio SAKITANI

High Speed Electron Beam Cell Projection Exposure System

Yoshihiko OKAMOTO, Norio SAITOU, Haruo YODA, Yoshio SAKITANI

Full Text Views

0

Cite this

Summary :

An electron beam cell projection system has been developed that can effectively expose the fine, demagnified resultant pattern of repeated and non-repeated patterns such as the 256 Mb DRAM on a semiconductor wafer. Particular attention was given to the beam shaping and deflecting optics, which has two stage deflectors for the cell projection beam selection as well as the beam sizing, and three stage deflectors for objective deflection. The cell mask with a rectangular aperture and multiple figure apertures is fabricated by modified Si wafer processes. A new exposure control data for the cell projection is proposed. This data is fitted for the combination of pattern data for the cell mask projection and pattern data for the variable rectangular shape beam within the divided units of the objective deflection. On this exposure system, selective exposure of the desired pattern becomes possible on the semiconductor wafer while a mounting stage of the wafer is being moved, even if the pattern exposure of the repeated and non-repeated patterns is to be carried out. The total overhead time for selecting a subset of multiple figures and a rectangular aperture of the cell mask is less than 5 seconds/wafer. The estimated throughput of this system is approximately 20 wafers/hour.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.445-452

Publication Date: 1994/03/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)

Category: Process Technology

Cite this

Copy

Yoshihiko OKAMOTO, Norio SAITOU, Haruo YODA, Yoshio SAKITANI, "High Speed Electron Beam Cell Projection Exposure System" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 3, pp. 445-452, March 1994, doi: .
Abstract: An electron beam cell projection system has been developed that can effectively expose the fine, demagnified resultant pattern of repeated and non-repeated patterns such as the 256 Mb DRAM on a semiconductor wafer. Particular attention was given to the beam shaping and deflecting optics, which has two stage deflectors for the cell projection beam selection as well as the beam sizing, and three stage deflectors for objective deflection. The cell mask with a rectangular aperture and multiple figure apertures is fabricated by modified Si wafer processes. A new exposure control data for the cell projection is proposed. This data is fitted for the combination of pattern data for the cell mask projection and pattern data for the variable rectangular shape beam within the divided units of the objective deflection. On this exposure system, selective exposure of the desired pattern becomes possible on the semiconductor wafer while a mounting stage of the wafer is being moved, even if the pattern exposure of the repeated and non-repeated patterns is to be carried out. The total overhead time for selecting a subset of multiple figures and a rectangular aperture of the cell mask is less than 5 seconds/wafer. The estimated throughput of this system is approximately 20 wafers/hour.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_445/_p

Copy

@ARTICLE{e77-c_3_445,
author={Yoshihiko OKAMOTO, Norio SAITOU, Haruo YODA, Yoshio SAKITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Speed Electron Beam Cell Projection Exposure System},
year={1994},
volume={E77-C},
number={3},
pages={445-452},
abstract={An electron beam cell projection system has been developed that can effectively expose the fine, demagnified resultant pattern of repeated and non-repeated patterns such as the 256 Mb DRAM on a semiconductor wafer. Particular attention was given to the beam shaping and deflecting optics, which has two stage deflectors for the cell projection beam selection as well as the beam sizing, and three stage deflectors for objective deflection. The cell mask with a rectangular aperture and multiple figure apertures is fabricated by modified Si wafer processes. A new exposure control data for the cell projection is proposed. This data is fitted for the combination of pattern data for the cell mask projection and pattern data for the variable rectangular shape beam within the divided units of the objective deflection. On this exposure system, selective exposure of the desired pattern becomes possible on the semiconductor wafer while a mounting stage of the wafer is being moved, even if the pattern exposure of the repeated and non-repeated patterns is to be carried out. The total overhead time for selecting a subset of multiple figures and a rectangular aperture of the cell mask is less than 5 seconds/wafer. The estimated throughput of this system is approximately 20 wafers/hour.},
keywords={},
doi={},
ISSN={},
month={March},}

Copy

TY - JOUR
TI - High Speed Electron Beam Cell Projection Exposure System
T2 - IEICE TRANSACTIONS on Electronics
SP - 445
EP - 452
AU - Yoshihiko OKAMOTO
AU - Norio SAITOU
AU - Haruo YODA
AU - Yoshio SAKITANI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - An electron beam cell projection system has been developed that can effectively expose the fine, demagnified resultant pattern of repeated and non-repeated patterns such as the 256 Mb DRAM on a semiconductor wafer. Particular attention was given to the beam shaping and deflecting optics, which has two stage deflectors for the cell projection beam selection as well as the beam sizing, and three stage deflectors for objective deflection. The cell mask with a rectangular aperture and multiple figure apertures is fabricated by modified Si wafer processes. A new exposure control data for the cell projection is proposed. This data is fitted for the combination of pattern data for the cell mask projection and pattern data for the variable rectangular shape beam within the divided units of the objective deflection. On this exposure system, selective exposure of the desired pattern becomes possible on the semiconductor wafer while a mounting stage of the wafer is being moved, even if the pattern exposure of the repeated and non-repeated patterns is to be carried out. The total overhead time for selecting a subset of multiple figures and a rectangular aperture of the cell mask is less than 5 seconds/wafer. The estimated throughput of this system is approximately 20 wafers/hour.
ER -