Characterization for Negative Differential Resistance in Surface Tunnel Transistors
Summary :
Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.
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- IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1444-1449
- Publication Date
- 1994/09/25
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- Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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Tetsuya UEMURA, "Characterization for Negative Differential Resistance in Surface Tunnel Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 9, pp. 1444-1449, September 1994, doi: .
Abstract: Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1444/_p
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@ARTICLE{e77-c_9_1444,
author={Tetsuya UEMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization for Negative Differential Resistance in Surface Tunnel Transistors},
year={1994},
volume={E77-C},
number={9},
pages={1444-1449},
abstract={Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Characterization for Negative Differential Resistance in Surface Tunnel Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1444
EP - 1449
AU - Tetsuya UEMURA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.
ER -
English
