The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs

Hidetoshi OGIHARA; Masaki YOSHIMARU; Shunji TAKASE; Hiroki KUROGI; Hiroyuki TAMURA; Akio KITA; Hiroshi ONODA; Madayoshi INO

The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs

Hidetoshi OGIHARA, Masaki YOSHIMARU, Shunji TAKASE, Hiroki KUROGI, Hiroyuki TAMURA, Akio KITA, Hiroshi ONODA, Madayoshi INO

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The Double-Sided Rugged poly Si (DSR) technology has been developed for high density DRAMs. The DSR technology was achieved using transformation of rugged poly Si caused by ion implantation. The DSR can increase the surface area of the storage electrode, because it has rugged surfaces on both upper and lower sides. The 2-FINs STC (STacked Capacitor cell) with DSR was fabricated in the cell size of 0.72 µm², and it is confirmed that the DSR can increase the surface area 1.8 times larger than that of smooth poly Si. It is expected that 25 fF/bit is obtained with a 300 nm-thick storage electrode. These effects show that sufficient capacitance for 256 Mb DRAMs is obtained with a low storage electrode. It is confirmed that there is no degradation in C-V and I-V characteristics. Moreover, the DSR needs neither complicated process steps nor special technologies. Therefore, the DSR technology is one of the most suitable methods for 256 Mb DRAMs and beyond.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.3 pp.288-292

Publication Date: 1995/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)

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Hidetoshi OGIHARA, Masaki YOSHIMARU, Shunji TAKASE, Hiroki KUROGI, Hiroyuki TAMURA, Akio KITA, Hiroshi ONODA, Madayoshi INO, "The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 3, pp. 288-292, March 1995, doi: .
Abstract: The Double-Sided Rugged poly Si (DSR) technology has been developed for high density DRAMs. The DSR technology was achieved using transformation of rugged poly Si caused by ion implantation. The DSR can increase the surface area of the storage electrode, because it has rugged surfaces on both upper and lower sides. The 2-FINs STC (STacked Capacitor cell) with DSR was fabricated in the cell size of 0.72 µm², and it is confirmed that the DSR can increase the surface area 1.8 times larger than that of smooth poly Si. It is expected that 25 fF/bit is obtained with a 300 nm-thick storage electrode. These effects show that sufficient capacitance for 256 Mb DRAMs is obtained with a low storage electrode. It is confirmed that there is no degradation in C-V and I-V characteristics. Moreover, the DSR needs neither complicated process steps nor special technologies. Therefore, the DSR technology is one of the most suitable methods for 256 Mb DRAMs and beyond.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_3_288/_p

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@ARTICLE{e78-c_3_288,
author={Hidetoshi OGIHARA, Masaki YOSHIMARU, Shunji TAKASE, Hiroki KUROGI, Hiroyuki TAMURA, Akio KITA, Hiroshi ONODA, Madayoshi INO, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs},
year={1995},
volume={E78-C},
number={3},
pages={288-292},
abstract={The Double-Sided Rugged poly Si (DSR) technology has been developed for high density DRAMs. The DSR technology was achieved using transformation of rugged poly Si caused by ion implantation. The DSR can increase the surface area of the storage electrode, because it has rugged surfaces on both upper and lower sides. The 2-FINs STC (STacked Capacitor cell) with DSR was fabricated in the cell size of 0.72 µm², and it is confirmed that the DSR can increase the surface area 1.8 times larger than that of smooth poly Si. It is expected that 25 fF/bit is obtained with a 300 nm-thick storage electrode. These effects show that sufficient capacitance for 256 Mb DRAMs is obtained with a low storage electrode. It is confirmed that there is no degradation in C-V and I-V characteristics. Moreover, the DSR needs neither complicated process steps nor special technologies. Therefore, the DSR technology is one of the most suitable methods for 256 Mb DRAMs and beyond.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 288
EP - 292
AU - Hidetoshi OGIHARA
AU - Masaki YOSHIMARU
AU - Shunji TAKASE
AU - Hiroki KUROGI
AU - Hiroyuki TAMURA
AU - Akio KITA
AU - Hiroshi ONODA
AU - Madayoshi INO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1995
AB - The Double-Sided Rugged poly Si (DSR) technology has been developed for high density DRAMs. The DSR technology was achieved using transformation of rugged poly Si caused by ion implantation. The DSR can increase the surface area of the storage electrode, because it has rugged surfaces on both upper and lower sides. The 2-FINs STC (STacked Capacitor cell) with DSR was fabricated in the cell size of 0.72 µm², and it is confirmed that the DSR can increase the surface area 1.8 times larger than that of smooth poly Si. It is expected that 25 fF/bit is obtained with a 300 nm-thick storage electrode. These effects show that sufficient capacitance for 256 Mb DRAMs is obtained with a low storage electrode. It is confirmed that there is no degradation in C-V and I-V characteristics. Moreover, the DSR needs neither complicated process steps nor special technologies. Therefore, the DSR technology is one of the most suitable methods for 256 Mb DRAMs and beyond.
ER -