Although the line-of-sight (LoS) is expected to be useful as input methodology for computer systems, the application area of the conventional LoS detection system composed of video camera and image processor is restricted in the specialized area, such as academic research, due to its large size and high cost. There is a rapid eye motion, so called 'saccade' in our eye motion, which is expected to be useful for various applications. Because of the saccade's very high speed, it is impossible to track the saccade without using high speed camera. The authors have been proposing the high speed vision chip for LoS detection including saccade based on the pixel parallel processing architecture, however, its resolution is very low for the large size of its pixel. In this paper, we propose and discuss an architecture of the vision chip for LoS detection including saccade based on column-parallel processing manner for increasing the resolution with keeping high processing speed.

Rapid eye motion, or so called saccade, is a very quick eye motion which always occurs regardless of our intention. Although the line of sight (LOS) with saccade tracking is expected to be used for a new type of computer-human interface, it is impossible to track it using the conventional video camera, because of its speed which is often up to 600 degrees per second. Vision Chip is an intelligent image sensor which has the photo receptor and the image processing circuitry on a single chip, which can process the acquired image information by keeping its spatial parallelism. It has also the ability of implementing the very compact integrated vision system. In this paper, we describe the vision chip architecture which has the capability of detecting the line of sight from infrared eye image, with the processing speed supporting the saccade tracking. The vision chip described here has the pixel parallel processing architecture, with the node automata for each pixel as image processing. The acquired image is digitized to two flags indicating the Purkinje's image and the pupil by comparators at first. The digitized images are then shrunk, followed by several steps of expanding by node automata located at each pixel. The shrinking process is kept executed until all the pixels disappear, and the pixel disappearing at last indicates the center of the Purkinje's image and the pupil. This disappearing step is detected by the projection circuitry in pixel circuit for fast operation, and the coordinates of the center of the Purkinje's image and the pupil are generated by the simple encoders. We describe the whole architecture of this vision chip, as well as the pixel architecture. We also describe the evaluation of proposed algorithm with numerical simulation, as well as processing speed using FPGA, and improvement in resolution using column parallel architecture.

The Double-Sided Rugged poly Si (DSR) technology has been developed for high density DRAMs. The DSR technology was achieved using transformation of rugged poly Si caused by ion implantation. The DSR can increase the surface area of the storage electrode, because it has rugged surfaces on both upper and lower sides. The 2-FINs STC (STacked Capacitor cell) with DSR was fabricated in the cell size of 0.72 µm2, and it is confirmed that the DSR can increase the surface area 1.8 times larger than that of smooth poly Si. It is expected that 25 fF/bit is obtained with a 300 nm-thick storage electrode. These effects show that sufficient capacitance for 256 Mb DRAMs is obtained with a low storage electrode. It is confirmed that there is no degradation in C-V and I-V characteristics. Moreover, the DSR needs neither complicated process steps nor special technologies. Therefore, the DSR technology is one of the most suitable methods for 256 Mb DRAMs and beyond.

A novel multiple programming method for a phase change nonvolatile random access memory (NVRAM) is proposed. The resistance of the chalcogenide semiconductors (phase change materials, e.g. SeSbTe) stacked on the memory cell is controlled by the number of the applied current pulses, and we have observed experimentally 4-valued resistance in the range of 42 k-2.1kΩ at the SeSbTe discrete memory cell. On the basis of this experimental results, the 4-valued memory circuit was designed with CMOS 0.35 µm process. It has been confirmed with a circuit simulation that the multi-bit read circuit proposed works successfully under a read cycle operation over 100 MHz at 3.3 V supply voltage and the read operation is completed within 3 nsec.

The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).