Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer

Kazuhiko NAKAHARA; Yasushi ITOH; Yoshie HORIIE; Takeshi SAKURA; Naohito YOSHIDA; Takayuki KATOH; Tadashi TAKAGI; Yasuo MITSUI; Yasuyuki ITO

Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer

Kazuhiko NAKAHARA, Yasushi ITOH, Yoshie HORIIE, Takeshi SAKURA, Naohito YOSHIDA, Takayuki KATOH, Tadashi TAKAGI, Yasuo MITSUI, Yasuyuki ITO

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Millimeter-wave monolithic low noise amplifier modules using 0.15 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been developed at V- and W-bands for the Advanced Microwave Scanning Radiometer. To achieve low noise and high gain of V-band single-stage and W-band two-stage monolithic amplifiers, a reactive matching method is employed in the design of input noise matching and output gain matching circuits based on the results of on-carrier S-parameter measurements up to 50 GHz and noise parameter measurements at 60 and 90 GHz. A V-band four-stage monolithic amplifier module has been mounted on a hermetically-sealed package with microstrip interface and has achieved a noise figure of 3 dB with a gain of 42.2 dB at 51 GHz. A W-band six-stage amplifier module has been mounted on a hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. These results represent the best noise figure performance ever achieved by multi-stage monolithic low-noise amplifier modules.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1210-1215

Publication Date: 1995/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)

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Kazuhiko NAKAHARA, Yasushi ITOH, Yoshie HORIIE, Takeshi SAKURA, Naohito YOSHIDA, Takayuki KATOH, Tadashi TAKAGI, Yasuo MITSUI, Yasuyuki ITO, "Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 9, pp. 1210-1215, September 1995, doi: .
Abstract: Millimeter-wave monolithic low noise amplifier modules using 0.15 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been developed at V- and W-bands for the Advanced Microwave Scanning Radiometer. To achieve low noise and high gain of V-band single-stage and W-band two-stage monolithic amplifiers, a reactive matching method is employed in the design of input noise matching and output gain matching circuits based on the results of on-carrier S-parameter measurements up to 50 GHz and noise parameter measurements at 60 and 90 GHz. A V-band four-stage monolithic amplifier module has been mounted on a hermetically-sealed package with microstrip interface and has achieved a noise figure of 3 dB with a gain of 42.2 dB at 51 GHz. A W-band six-stage amplifier module has been mounted on a hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. These results represent the best noise figure performance ever achieved by multi-stage monolithic low-noise amplifier modules.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1210/_p

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@ARTICLE{e78-c_9_1210,
author={Kazuhiko NAKAHARA, Yasushi ITOH, Yoshie HORIIE, Takeshi SAKURA, Naohito YOSHIDA, Takayuki KATOH, Tadashi TAKAGI, Yasuo MITSUI, Yasuyuki ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer},
year={1995},
volume={E78-C},
number={9},
pages={1210-1215},
abstract={Millimeter-wave monolithic low noise amplifier modules using 0.15 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been developed at V- and W-bands for the Advanced Microwave Scanning Radiometer. To achieve low noise and high gain of V-band single-stage and W-band two-stage monolithic amplifiers, a reactive matching method is employed in the design of input noise matching and output gain matching circuits based on the results of on-carrier S-parameter measurements up to 50 GHz and noise parameter measurements at 60 and 90 GHz. A V-band four-stage monolithic amplifier module has been mounted on a hermetically-sealed package with microstrip interface and has achieved a noise figure of 3 dB with a gain of 42.2 dB at 51 GHz. A W-band six-stage amplifier module has been mounted on a hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. These results represent the best noise figure performance ever achieved by multi-stage monolithic low-noise amplifier modules.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1210
EP - 1215
AU - Kazuhiko NAKAHARA
AU - Yasushi ITOH
AU - Yoshie HORIIE
AU - Takeshi SAKURA
AU - Naohito YOSHIDA
AU - Takayuki KATOH
AU - Tadashi TAKAGI
AU - Yasuo MITSUI
AU - Yasuyuki ITO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - Millimeter-wave monolithic low noise amplifier modules using 0.15 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been developed at V- and W-bands for the Advanced Microwave Scanning Radiometer. To achieve low noise and high gain of V-band single-stage and W-band two-stage monolithic amplifiers, a reactive matching method is employed in the design of input noise matching and output gain matching circuits based on the results of on-carrier S-parameter measurements up to 50 GHz and noise parameter measurements at 60 and 90 GHz. A V-band four-stage monolithic amplifier module has been mounted on a hermetically-sealed package with microstrip interface and has achieved a noise figure of 3 dB with a gain of 42.2 dB at 51 GHz. A W-band six-stage amplifier module has been mounted on a hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. These results represent the best noise figure performance ever achieved by multi-stage monolithic low-noise amplifier modules.
ER -