Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons
Summary :
We discuss fabrication of InGaAs quantum dot structures using the self-assembling growth technique with the Stranski-Krastanow growth mode in MOCVD, including optical ploperties of the nano-structures. The formation process of the quantum dot islands was clarified by observing the samples grown under various conditions with an atomic force microscope. A trial for self-alignment of the quantum dots was also investigated. On the basis of these results, as the first step toward the ultimate semiconductor lasers in which both electrons and photons are fully quantized, a vertical microcavity InGaAs/GaAs quantum dot laser was demonstrated. Finally a perspective of the quantum dot lasers is discussed, including the bottleneck issues and the impact of the quantum dot structures for reducing threshold current in wide bandgap lasers such as GaN lasers.
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- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1487-1494
- Publication Date
- 1996/11/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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Yasuhiko ARAKAWA, Masao NISHIOKA, Hajime NAKAYAMA, Masaki KITAMURA, "Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1487-1494, November 1996, doi: .
Abstract: We discuss fabrication of InGaAs quantum dot structures using the self-assembling growth technique with the Stranski-Krastanow growth mode in MOCVD, including optical ploperties of the nano-structures. The formation process of the quantum dot islands was clarified by observing the samples grown under various conditions with an atomic force microscope. A trial for self-alignment of the quantum dots was also investigated. On the basis of these results, as the first step toward the ultimate semiconductor lasers in which both electrons and photons are fully quantized, a vertical microcavity InGaAs/GaAs quantum dot laser was demonstrated. Finally a perspective of the quantum dot lasers is discussed, including the bottleneck issues and the impact of the quantum dot structures for reducing threshold current in wide bandgap lasers such as GaN lasers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1487/_p
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@ARTICLE{e79-c_11_1487,
author={Yasuhiko ARAKAWA, Masao NISHIOKA, Hajime NAKAYAMA, Masaki KITAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons},
year={1996},
volume={E79-C},
number={11},
pages={1487-1494},
abstract={We discuss fabrication of InGaAs quantum dot structures using the self-assembling growth technique with the Stranski-Krastanow growth mode in MOCVD, including optical ploperties of the nano-structures. The formation process of the quantum dot islands was clarified by observing the samples grown under various conditions with an atomic force microscope. A trial for self-alignment of the quantum dots was also investigated. On the basis of these results, as the first step toward the ultimate semiconductor lasers in which both electrons and photons are fully quantized, a vertical microcavity InGaAs/GaAs quantum dot laser was demonstrated. Finally a perspective of the quantum dot lasers is discussed, including the bottleneck issues and the impact of the quantum dot structures for reducing threshold current in wide bandgap lasers such as GaN lasers.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons
T2 - IEICE TRANSACTIONS on Electronics
SP - 1487
EP - 1494
AU - Yasuhiko ARAKAWA
AU - Masao NISHIOKA
AU - Hajime NAKAYAMA
AU - Masaki KITAMURA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - We discuss fabrication of InGaAs quantum dot structures using the self-assembling growth technique with the Stranski-Krastanow growth mode in MOCVD, including optical ploperties of the nano-structures. The formation process of the quantum dot islands was clarified by observing the samples grown under various conditions with an atomic force microscope. A trial for self-alignment of the quantum dots was also investigated. On the basis of these results, as the first step toward the ultimate semiconductor lasers in which both electrons and photons are fully quantized, a vertical microcavity InGaAs/GaAs quantum dot laser was demonstrated. Finally a perspective of the quantum dot lasers is discussed, including the bottleneck issues and the impact of the quantum dot structures for reducing threshold current in wide bandgap lasers such as GaN lasers.
ER -
English
