Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties
Summary :
New fabrication process for the nano-meter order structure was developed using the STM. The process named "STM nano-oxidation process" could oxidize the titanium metal to form the few tens of nano-meter oxidized titanium line which works as an energy barrier for the electron. The electrical properties of the TiOx line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of -160 mV, and the Coulomb oscillation with 400 mV period even at room temperature.
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- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1509-1514
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- 1996/11/25
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- Special Section INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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Kazuhiko MATSUMOTO, "Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1509-1514, November 1996, doi: .
Abstract: New fabrication process for the nano-meter order structure was developed using the STM. The process named "STM nano-oxidation process" could oxidize the titanium metal to form the few tens of nano-meter oxidized titanium line which works as an energy barrier for the electron. The electrical properties of the TiOx line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of -160 mV, and the Coulomb oscillation with 400 mV period even at room temperature.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1509/_p
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@ARTICLE{e79-c_11_1509,
author={Kazuhiko MATSUMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties},
year={1996},
volume={E79-C},
number={11},
pages={1509-1514},
abstract={New fabrication process for the nano-meter order structure was developed using the STM. The process named "STM nano-oxidation process" could oxidize the titanium metal to form the few tens of nano-meter oxidized titanium line which works as an energy barrier for the electron. The electrical properties of the TiOx line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of -160 mV, and the Coulomb oscillation with 400 mV period even at room temperature.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties
T2 - IEICE TRANSACTIONS on Electronics
SP - 1509
EP - 1514
AU - Kazuhiko MATSUMOTO
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - New fabrication process for the nano-meter order structure was developed using the STM. The process named "STM nano-oxidation process" could oxidize the titanium metal to form the few tens of nano-meter oxidized titanium line which works as an energy barrier for the electron. The electrical properties of the TiOx line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of -160 mV, and the Coulomb oscillation with 400 mV period even at room temperature.
ER -
English
