Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs
Summary :
The edge of a thin SOI (silicon on insulator) film was used to form a very narrow Si-MOS inversion layer. The ultra-thin SOI film was formed by local oxidation of SIMOX wafer. The thickness of the SOI film is less than 15 nm, i.e., the channel width is narrower than 15 nm. At low tempera-tures, clear and large conductance oscillations were seen in this edge channel MOSFET. These oscillations are explained by Coulomb blockade effects in the narrow channel with several effective potential barriers, since the SOI film is so thin that the channel current is seriously affected by small potential fluctuations in the channel. These results suggest that the channel current in edge quantum wire MOSFET can be cut off even with a small controlled potential change. Furthermore, we fabricated a double-gate edge channel Si-MOSFET. In this device, the channel current can be controlled in two ways. One way is to control the electron number inside the isolated electrodes. The other way is to control the threshold voltage of MOSFET. This device enables us to control the phase of Coulomb oscillation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1586-1589
- Publication Date
- 1996/11/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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Akiko OHATA, Akira TORIUMI, "Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1586-1589, November 1996, doi: .
Abstract: The edge of a thin SOI (silicon on insulator) film was used to form a very narrow Si-MOS inversion layer. The ultra-thin SOI film was formed by local oxidation of SIMOX wafer. The thickness of the SOI film is less than 15 nm, i.e., the channel width is narrower than 15 nm. At low tempera-tures, clear and large conductance oscillations were seen in this edge channel MOSFET. These oscillations are explained by Coulomb blockade effects in the narrow channel with several effective potential barriers, since the SOI film is so thin that the channel current is seriously affected by small potential fluctuations in the channel. These results suggest that the channel current in edge quantum wire MOSFET can be cut off even with a small controlled potential change. Furthermore, we fabricated a double-gate edge channel Si-MOSFET. In this device, the channel current can be controlled in two ways. One way is to control the electron number inside the isolated electrodes. The other way is to control the threshold voltage of MOSFET. This device enables us to control the phase of Coulomb oscillation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1586/_p
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@ARTICLE{e79-c_11_1586,
author={Akiko OHATA, Akira TORIUMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs},
year={1996},
volume={E79-C},
number={11},
pages={1586-1589},
abstract={The edge of a thin SOI (silicon on insulator) film was used to form a very narrow Si-MOS inversion layer. The ultra-thin SOI film was formed by local oxidation of SIMOX wafer. The thickness of the SOI film is less than 15 nm, i.e., the channel width is narrower than 15 nm. At low tempera-tures, clear and large conductance oscillations were seen in this edge channel MOSFET. These oscillations are explained by Coulomb blockade effects in the narrow channel with several effective potential barriers, since the SOI film is so thin that the channel current is seriously affected by small potential fluctuations in the channel. These results suggest that the channel current in edge quantum wire MOSFET can be cut off even with a small controlled potential change. Furthermore, we fabricated a double-gate edge channel Si-MOSFET. In this device, the channel current can be controlled in two ways. One way is to control the electron number inside the isolated electrodes. The other way is to control the threshold voltage of MOSFET. This device enables us to control the phase of Coulomb oscillation.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1586
EP - 1589
AU - Akiko OHATA
AU - Akira TORIUMI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - The edge of a thin SOI (silicon on insulator) film was used to form a very narrow Si-MOS inversion layer. The ultra-thin SOI film was formed by local oxidation of SIMOX wafer. The thickness of the SOI film is less than 15 nm, i.e., the channel width is narrower than 15 nm. At low tempera-tures, clear and large conductance oscillations were seen in this edge channel MOSFET. These oscillations are explained by Coulomb blockade effects in the narrow channel with several effective potential barriers, since the SOI film is so thin that the channel current is seriously affected by small potential fluctuations in the channel. These results suggest that the channel current in edge quantum wire MOSFET can be cut off even with a small controlled potential change. Furthermore, we fabricated a double-gate edge channel Si-MOSFET. In this device, the channel current can be controlled in two ways. One way is to control the electron number inside the isolated electrodes. The other way is to control the threshold voltage of MOSFET. This device enables us to control the phase of Coulomb oscillation.
ER -
English
