Simple Small-Signal Model for 3-Port MOS Transistors
Summary :
The inclusion of the non-quasi-static effect is crucial in the simulation of the microwave circuits for MOS transistors. This report proposes a simple model which includes this effect in small-signal simulation. The simulated results are consistent with the measured data up to a frequency that is 30 times higher frequency than the cut-off frequency.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.12 pp.1760-1765
- Publication Date
- 1996/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
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Yoichiro NIITSU, "Simple Small-Signal Model for 3-Port MOS Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 12, pp. 1760-1765, December 1996, doi: .
Abstract: The inclusion of the non-quasi-static effect is crucial in the simulation of the microwave circuits for MOS transistors. This report proposes a simple model which includes this effect in small-signal simulation. The simulated results are consistent with the measured data up to a frequency that is 30 times higher frequency than the cut-off frequency.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_12_1760/_p
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@ARTICLE{e79-c_12_1760,
author={Yoichiro NIITSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simple Small-Signal Model for 3-Port MOS Transistors},
year={1996},
volume={E79-C},
number={12},
pages={1760-1765},
abstract={The inclusion of the non-quasi-static effect is crucial in the simulation of the microwave circuits for MOS transistors. This report proposes a simple model which includes this effect in small-signal simulation. The simulated results are consistent with the measured data up to a frequency that is 30 times higher frequency than the cut-off frequency.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Simple Small-Signal Model for 3-Port MOS Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1760
EP - 1765
AU - Yoichiro NIITSU
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1996
AB - The inclusion of the non-quasi-static effect is crucial in the simulation of the microwave circuits for MOS transistors. This report proposes a simple model which includes this effect in small-signal simulation. The simulated results are consistent with the measured data up to a frequency that is 30 times higher frequency than the cut-off frequency.
ER -
English
