Discussed here is reduction of power dissipation for multi-media LSIs. First, both active power dissipation P_at and stand-by power dissipation P_st for both CMOS LSIs and GaAs LSIs are summarized. Then, general technologies for reducing P_at are discussed. Also reviewed are a wide variety of approaches (i.e., parallel and pipeline schemes, Chen's fast DCT algorithms, hierarchical search scheme for motion vectors, etc.) for reduction of P_at. The last part of the paper focuses on reduction of P_st. Reducing both P_at and P_st requires that both throughput and active chip areas be either maintained or improved.

We describe low supply voltage analog circuit techniques for voice- and audio-band interfaces. These techniques can lower the supply voltage to 1 V, which is the voltage of a one-NiCd-cell battery. We have applied them in a swingsuppression noise-shaping method, and using this method, have fabricated A/D and D/A converters for the voice and audio bands. These converters operate with a 1 V power supply and have 13-bit and 17-bit accuracy in the audio-band and power consumption of about 1 mW. This performance proves that our techniques are sufficient for baseband analog interfaces.

BiCMOS circuits using a base-boost technique for low-voltage application have been proposed. These circuits can operate at supply voltages down to 1.5 V. Their power dissipation, however, is 1.5-2 times of that of the CMOS circuit. We propose a novel BiCMOS circuit dissipating less power than that of conventional circuits. A base-boost technique is a key to low-voltage operation, and a gate holding the output voltage and a depletion nMOS pre-charge transistor are also introduced to reduce the power dissipation. Results of simulations using 0.3µm BiCMOS device parameters show that base-boosted BiNMOS (BB-BiNMOS) circuit is 1.5 times faster than CMOS circuit even at 1 V and that its power dissipation is almost the same power as that of a CMOS circuit, the base-boosted BiCMOS (BB-BiCMOS) circuit is twice as fast and dissipates only 1.2 times as much power. The energy-delay product of the BB-BiCMOS circuit is smaller than that of conventional BiCMOS circuits and is about half of that of a CMOS circuit, the BB-BiCMOS circuit is thus the most promising high-speed circuits for low-voltage and low-power applications.

Very-low-voltage 1.2-V mixed-signal CMOS technology is a device/circuit solution aimed at ultra-low-power portable systems such as digital cellular terminals and PDAs. We have developed an experimental 1.2-V mixed analog and digital LSI circuit/device technology. This technology is based on a new transistor structure that has a 0.3-µm gate length and a low V_th of 0.4 V, and that suppresses the short-channel effect. In this paper, we will mainly discuss low-voltage analog circuit design that uses this technology. We show that low V_th is essential not only to digital circuits, but also to 1.2-V analog amplifier, A/D converter and analog switch designs. To achieve high-conversion rate A/D converters, a pipeline architecture is used for low-voltage operation. To increase the attainable gain-bandwidth of the operational amplifier of the converter, a feedforward phase-compensated three-stage amplifier is proposed. The addition of a feedforward capacitor allows a high frequency signal to pass directly to the second stage, which optimizes use of the second stage bandwidth. Pole-zero canceling is used to achieve a fast settling of the amplifier. Although gain precision is degraded by the positive feedback through the feedforward capacitor, this can be offset by increasing the equivalent second-stage gain with an inner feedforward compensated amplifier. The gain-bandwidth of the proposed double feedforward amplifier is two to three times wider than with the conventional Miller compensation. With these techniques, we used 1.2-V mixed-signal CMOS technology to create a basic logic gate with a 400-ps delay and 0.4-µW/MHz power, and a 9-bit 2-Msample/s pipeline A/D converter with power dissipation of only 4 mW.

A low power consumption 16-bit fixed point Digital Signal Processor (DSP) has been developed to realize a half-rate CODEC for the Personal Digital Cellular (PDC) system. Dual datapath architecture has been employed to execute multiply-accumulate (MAC) operations with a high degree of efficiency. With this architecture. 86.3% of total MAC operations in the Pitch Synchronous Innovation Code Excited Linear Prediction (PSI-CELP) program are executed in parallel, so that total instruction cycles are reduced by 23.1%. The area overhead for the dual datapath architecture is only 3.0% of the total area. Furthermore, in order to reduce power consumption, circuit design techniques are also extensively applied to RAMs. ROMs, and clock circuits, which consume the great majority of power. By reducing the number of precharging bit lines, a power reduction of 49.8% is achieved in RAMs, and above 40% in ROMs. By applying gated clock to clock lines, a power reduction of 5.0% is achieved in the DSP that performs the PSI-CELP algorithm. The DSP is fabricated in 0.5 µm single-poly, double-metal CMOS technology. The PSI-CELP algorithm for the PDC half-rate CODEC can operate at 22.5 MHz instruction frequency and 1.6 V supply voltage. resulting in a low-power consumption of 28 mW.

High level power estimation model is indispensable to optimize architecture and programs in terms of power consumption systematically. This paper describes power analysis results of a general purpose programmable DSP using switch level and cell based power simulation. The analysis results help to know characteristics of the DSP components and to establish a power estimation model. A compensation method for the lack of intra-cell capacitance in a cell based simulation is proposed to improve the simulation accuracy within -20% of error against the measured power. We considered that the error is caused by ignoring short circuit current and is accurate enough for this level of simulation. Through a result of the power breakdown by modules of the DSP obtained by the simulation, it was found that bus power is much less than generally expected (the simulated power is less than 5% of the total), and that the data operation power dominates the chip power (up to 33%) and is strongly data dependent. The reason that the bus power is low is because both of the load capacitance and the activity are low. Some correlation between the number of input signal transitions and the power consumption is found in each of an ALU, register file, and multiplier through further investigation on the data operation modules. The correlation is worthwhile to establish a power estimation model and is eventually useful to optimize a DSP architecture and DSP programs. The importance of power estimation model is demonstrated by showing an example in which we optimize an FIR filter program based upon the analysis results and proposed a direction of architecture optimization.

An embedded cache memory for low power RISC microprocessors is described. An automatic-power-save architecture (APSA) enables the cache memory to operate with high speed at high frequencies, and with low power dissipation at low frequencies. A pulsed word technique (PWT) and an isolated bit line technique (IBLT) reduce the power dissipation of the cache memory effectively. Using these three techniques, the power dissipation of the cache memory is reduced to almost 60% of the conventional cache memory at 60 MHz and to 20% at a clock frequency of 10 MHz. An 8 KByte test chip using 0.5 µm CMOS technology was fabricated, and it achieves 80 MHz operation at a supply voltage of 3.1 V, and 8 mW operation at a supply voltage of 2.5 V at 10 MHz.

This paper proposes a small 1/4Vcc bit-line swing scheme and a related sense amplifier scheme for low power 1 V operating DRAM. Using the proposed small bit-line swing scheme, the stress bias of memory cell transistor and capacitor is reduced to half that of the conventional DRAM, resulting in improvement of device reliability. The proposed sense amplifier scheme achieves high speed and stable sensing/restoring operation at 250mV bit-line swing, which is much smaller than threshold voltage. The proposed scheme reduces the total power dissipation of bit-line sensing/restoring operation to 40% of the conventional one. This paper also proposes a small 4F² size memory cell and a new twisted bit-line scheme. The array noise is reduced to 8.6% of the conventional DRAM.

To evaluate DRAM memory-cell data retention characteristics, measuring the leakage current of the individual memory-cell is important. However, the leakage current of a DRAM memory-cell cannot be measured directly, because its value is on the order of femtoamperes. This paper describes a Plate Bumping (PB) method that can measure the leakage current of a specific memory-cell using the relationship between the shifted value of memory-cell-plate potential and the retention period. By using the PB method, it can be confirmed that the leakage current of the short-retention cell (bad cell) depends on its storage-node potential. With regards to cells with "0" data stored in them ("0" cells), it appears that the relaxed junction biasing (RJB) scheme which can extend refresh interval increases the number of misread "0" cells due to the lowering of the sense amplifier's sensing threshold.

The local wiring structure which is known as a technique for reducing junction capacitance due to the area reduction of the Source/Drain junction by the "on-field" contact scheme was constructed. Its effect on speed/power improvement was evaluated with a ring oscillator. A speed improvement of 15% and a 17% reduction in power dissipation was obtained as compared with conventional non-local wiring structures. This technique was applied to a practical device application, that is, a 0.35 µm embedded dual port SRAM used as a buffer memory in an asynchronous transfer mode switch (ATM-SW) LSI. In order to suppress the coupling noise between the write and read bitlines with the small cell realized by the local wiring scheme, a new divided layer 'bitline architecture was developed. As a result, reduction of SRAM macro size of 31% was attained by also applying the local wiring scheme to peripheral circuits, such as decoder, sense amplifier, and driver. A detailed analysis on this embedded dual port SRAM revealed a 15.2% reduction of write port power at 3.3 V. It is also shown that the local wiring technique is more effective with low power supply voltages to allow for further power reduction.

A design methodology of high performance deep submicron CMOS in very low voltage operation has been proposed from low power dissipation point of view. In low voltage operation, threshold voltage is restricted by performance, stability of CMOS circuits and power dissipation caused by standby and switching transient current. As a result, threshold voltage is established to be 0.15 V even at 1 V operation from these requirements. Moreover, according to this design, 0.15 µm CMOS was fabricated with reduction of parasitic effects. It achieved propagation delay time 50 psec at 1 V operation. This results confirms that this design methodology is promising to achieve high performance deep submicron CMOS devices for low power dissipation.

A current controlled CMOS output driver was designed by using a temperature-insensitive reference current generator. It eliminates the need for overdesign of the driver transistor size to meet the delay specification at high temperature. Comparison with the conventional CMOS output driver with the same transistor size showed that the ground bounce noise was reduced by 2.5 times and the delay time was increased by 1.4 times, at 25 for 50pF load. The temperature variations of the DC pull-up and pull-down currents of the new output driver were 4% within the temperature range from -15 to 125 compared to the variations of 40 and 60% for pull-up and pull-down respectively for the conventional output driver. The temperature insensitivity of the reference current generator was achieved by multiplying two current components. one which is proportional to mobility and the other which is inversely proportional to mobility, by using a CMOS square root circuit. The temperature variation of the DC output current of the reference current generator alone was 0.77% within the entire temperature range from -15 to 125.

This paper reports on a high-speed silicon bipolar transistor with an f_T and f_MAX of over 40 GHz, we call it the Advanced Boro-silicated-glass Self-Aligned (A-BSA) transistor. In basic BSA technology, a CVD-BSG film is used not only as a diffusion source to form the intrinsic base and the link base regions but also as a sidewall spacer between the emitter and the base polysilicon electrodes. An A-BSA transistor offers three advancements to this technology: (1) a graded collector profile underneath the intrinsic base region to suppress the Kirk effect; (2) an optimized design of the link base region to prevent the frade-off effect between f_T and base resistance; and (3) a newly developed buried emitter electrode structure, consisting of an N⁺⁺-polysilicon layer, a platinum silicide layer, and a CVD tungsten plug, to prevent the emitter plug effect. Furthermore, our transistor uses a BPSG filled trench isolation to reduce parasitic capacitance and improve circuit performance. In this paper, we describe device design, process technology and characterization of the A-BSA transistor, with it we have performed several application ICs, operating at 10Gb/s and above. The A-BSA transistor achieved an f_T of 41 GHz and an f_MAX of 44 GHz under optimized conditions.

A new GaAs negative voltage generator suitable for biasing a GaAs MESFET power amplifier has been successfully developed and applied to a 1.9-GHz single-chip transmit/receive (T/R)-MMIC front-end including a power amplifier, a T/R-switch, and so on. To meet various requirements necessary for integration with a power amplifier, four new circuit techniques are introduced into this generator: (1)complementary charge pump operation to suppress spurious outputs. (2)an SCFL-to-DCFL cross-coupled level shifter to ensure a wide operation voltage range, (3)a level control circuit to reduce output voltage deviation caused by output current, and (4)interface and layout designs to achieve sufficient isolation between the power amplifier and the generator. The generator was incorporated into the MMIC front-end, and it was tested with a 30-lead shrink small outline package. With 20-to-500-MHz external input signals of more than -15 dBm, the generator produces negative voltages from -1.0 to -2.6 V for a wide range of suppiy voltages from 1.6 to 4.5 V. The current consumption is as low as 3.2 mA at 3 V. When a 22-dBm output is delivered through the power amplifier biased by the generator, low spurious outputs below -70 dBc are achieved. and gate-bias voltage deviations are suppressed to within 0.06 V even when a gate current of -140 µA flows through the amplifier. The generator also enables high speed operation of charge time below 200 ns, which is effective in TDMA systems such as digital cordless telephone systems. In layout design, electromagnetic simulation was utilized for estimating sufficient isolation between circuits in the MMIC. This negative voltage generator and its application techniques will enable GaAs high-density integration devices as well as single voltage operation of a GaAs MESFET power amplifier.

The paper discusses the possibility of building semiconductor lasers whose wavelength stays nearly constant with ambient temperature variation. Several factors affecting the lasing wavelength change with temperature variation in both distributed feedback lasers and Fabry-Perot lasers are addressed and the optimum design of bandgap temperature dependence for the active layer material is discussed. It is pointed out that the most important challenge we face in building temperature-insensitive wavelength lasers is the development of a temperature-insensitive bandgap material for the active layer. Based on published data, it is speculated that such a laser could be developed using a Hg_1-xCd_xTe/CdTe double heterostructure. Although no data is available yet, we expect a Ga_1-xIn_xAs_1-yBi_y III-V alloy semiconductor can be used for this purpose. Recently reported T1_xIn_1-x-yGa_yP III-V alloy semiconductor might be another promising candidate. Such lasers will greatly advance applications of WDM (Wavelength-Division-Multiplexing) technology to optical fiber communication systems and contribute to network innovations.

The inclusion of the non-quasi-static effect is crucial in the simulation of the microwave circuits for MOS transistors. This report proposes a simple model which includes this effect in small-signal simulation. The simulated results are consistent with the measured data up to a frequency that is 30 times higher frequency than the cut-off frequency.

Mechanism of the noise generation caused by the optical feedback in semiconductor laser was experimentally determined. Two types of the mode competition phenomena were confirmed to be the generating mechanisms. Applicability of the self-sustained pulsation to be a noise reduction method was also discussed.

Preliminary experiments on non-destructive quantitative analysis of water vapor density in halogen lamps have been carried out. A working curve showing a relation between absorbance and water vapor density was successfully obtained by using frequency-stabilized InGaAsP/InP semiconductor laser spectrometric system.

This paper is concerned with a point-oriented finite volume time domain (FVTD) method in the Cartesian coordinate system for analyzing electromagnetic wave scattering by arbitrary shaped metallic gratings. The perfectly matched layer (PML) is used for the absorbing boundary conditions (ABC's) in the directions corresponding to transmitted and reflected wave regions. An FVTD version of the Floquet's theorm is described to impose the periodic condition in the direction where conducting rods are located periodically. The boundary conditions for a conductor rod which is not well suited to the Cartesian coordinate system are satisfied in an average fashion by introducing image fields at image points. It is shown that the present method gives accurate numerical results. Numerical calculations are also carried out for thick conducting rods which seem difficult to deal with in an analytical way.