An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation

Tsutomu TASHIRO; Mitsuhiro SUGIYAMA; Hisashi TAKEMURA; Chihiro OGAWA; Masakazu KURISU; Hideki KITAHATA; Takenori MORIKAWA; Masahiko NAKAMAE

An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation

Tsutomu TASHIRO, Mitsuhiro SUGIYAMA, Hisashi TAKEMURA, Chihiro OGAWA, Masakazu KURISU, Hideki KITAHATA, Takenori MORIKAWA, Masahiko NAKAMAE

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This paper reports on a high-speed silicon bipolar transistor with an f_T and f_MAX of over 40 GHz, we call it the Advanced Boro-silicated-glass Self-Aligned (A-BSA) transistor. In basic BSA technology, a CVD-BSG film is used not only as a diffusion source to form the intrinsic base and the link base regions but also as a sidewall spacer between the emitter and the base polysilicon electrodes. An A-BSA transistor offers three advancements to this technology: (1) a graded collector profile underneath the intrinsic base region to suppress the Kirk effect; (2) an optimized design of the link base region to prevent the frade-off effect between f_T and base resistance; and (3) a newly developed buried emitter electrode structure, consisting of an N⁺⁺-polysilicon layer, a platinum silicide layer, and a CVD tungsten plug, to prevent the emitter plug effect. Furthermore, our transistor uses a BPSG filled trench isolation to reduce parasitic capacitance and improve circuit performance. In this paper, we describe device design, process technology and characterization of the A-BSA transistor, with it we have performed several application ICs, operating at 10Gb/s and above. The A-BSA transistor achieved an f_T of 41 GHz and an f_MAX of 44 GHz under optimized conditions.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.12 pp.1733-1740

Publication Date: 1996/12/25

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Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

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Tsutomu TASHIRO, Mitsuhiro SUGIYAMA, Hisashi TAKEMURA, Chihiro OGAWA, Masakazu KURISU, Hideki KITAHATA, Takenori MORIKAWA, Masahiko NAKAMAE, "An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 12, pp. 1733-1740, December 1996, doi: .
Abstract: This paper reports on a high-speed silicon bipolar transistor with an f_T and f_MAX of over 40 GHz, we call it the Advanced Boro-silicated-glass Self-Aligned (A-BSA) transistor. In basic BSA technology, a CVD-BSG film is used not only as a diffusion source to form the intrinsic base and the link base regions but also as a sidewall spacer between the emitter and the base polysilicon electrodes. An A-BSA transistor offers three advancements to this technology: (1) a graded collector profile underneath the intrinsic base region to suppress the Kirk effect; (2) an optimized design of the link base region to prevent the frade-off effect between f_T and base resistance; and (3) a newly developed buried emitter electrode structure, consisting of an N⁺⁺-polysilicon layer, a platinum silicide layer, and a CVD tungsten plug, to prevent the emitter plug effect. Furthermore, our transistor uses a BPSG filled trench isolation to reduce parasitic capacitance and improve circuit performance. In this paper, we describe device design, process technology and characterization of the A-BSA transistor, with it we have performed several application ICs, operating at 10Gb/s and above. The A-BSA transistor achieved an f_T of 41 GHz and an f_MAX of 44 GHz under optimized conditions.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_12_1733/_p

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@ARTICLE{e79-c_12_1733,
author={Tsutomu TASHIRO, Mitsuhiro SUGIYAMA, Hisashi TAKEMURA, Chihiro OGAWA, Masakazu KURISU, Hideki KITAHATA, Takenori MORIKAWA, Masahiko NAKAMAE, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation},
year={1996},
volume={E79-C},
number={12},
pages={1733-1740},
abstract={This paper reports on a high-speed silicon bipolar transistor with an f_T and f_MAX of over 40 GHz, we call it the Advanced Boro-silicated-glass Self-Aligned (A-BSA) transistor. In basic BSA technology, a CVD-BSG film is used not only as a diffusion source to form the intrinsic base and the link base regions but also as a sidewall spacer between the emitter and the base polysilicon electrodes. An A-BSA transistor offers three advancements to this technology: (1) a graded collector profile underneath the intrinsic base region to suppress the Kirk effect; (2) an optimized design of the link base region to prevent the frade-off effect between f_T and base resistance; and (3) a newly developed buried emitter electrode structure, consisting of an N⁺⁺-polysilicon layer, a platinum silicide layer, and a CVD tungsten plug, to prevent the emitter plug effect. Furthermore, our transistor uses a BPSG filled trench isolation to reduce parasitic capacitance and improve circuit performance. In this paper, we describe device design, process technology and characterization of the A-BSA transistor, with it we have performed several application ICs, operating at 10Gb/s and above. The A-BSA transistor achieved an f_T of 41 GHz and an f_MAX of 44 GHz under optimized conditions.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1733
EP - 1740
AU - Tsutomu TASHIRO
AU - Mitsuhiro SUGIYAMA
AU - Hisashi TAKEMURA
AU - Chihiro OGAWA
AU - Masakazu KURISU
AU - Hideki KITAHATA
AU - Takenori MORIKAWA
AU - Masahiko NAKAMAE
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1996
AB - This paper reports on a high-speed silicon bipolar transistor with an f_T and f_MAX of over 40 GHz, we call it the Advanced Boro-silicated-glass Self-Aligned (A-BSA) transistor. In basic BSA technology, a CVD-BSG film is used not only as a diffusion source to form the intrinsic base and the link base regions but also as a sidewall spacer between the emitter and the base polysilicon electrodes. An A-BSA transistor offers three advancements to this technology: (1) a graded collector profile underneath the intrinsic base region to suppress the Kirk effect; (2) an optimized design of the link base region to prevent the frade-off effect between f_T and base resistance; and (3) a newly developed buried emitter electrode structure, consisting of an N⁺⁺-polysilicon layer, a platinum silicide layer, and a CVD tungsten plug, to prevent the emitter plug effect. Furthermore, our transistor uses a BPSG filled trench isolation to reduce parasitic capacitance and improve circuit performance. In this paper, we describe device design, process technology and characterization of the A-BSA transistor, with it we have performed several application ICs, operating at 10Gb/s and above. The A-BSA transistor achieved an f_T of 41 GHz and an f_MAX of 44 GHz under optimized conditions.
ER -