A BiCMOS Circuit Using a Base-Boost Technique for Low-Voltage, Low-Power Application

Kenichi OHHATA; Hiroaki NAMBU; Kazuo KANETANI; Toru MASUDA; Takeshi KUSUNOKI; Noriyuki HOMMA

A BiCMOS Circuit Using a Base-Boost Technique for Low-Voltage, Low-Power Application

Kenichi OHHATA, Hiroaki NAMBU, Kazuo KANETANI, Toru MASUDA, Takeshi KUSUNOKI, Noriyuki HOMMA

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BiCMOS circuits using a base-boost technique for low-voltage application have been proposed. These circuits can operate at supply voltages down to 1.5 V. Their power dissipation, however, is 1.5-2 times of that of the CMOS circuit. We propose a novel BiCMOS circuit dissipating less power than that of conventional circuits. A base-boost technique is a key to low-voltage operation, and a gate holding the output voltage and a depletion nMOS pre-charge transistor are also introduced to reduce the power dissipation. Results of simulations using 0.3µm BiCMOS device parameters show that base-boosted BiNMOS (BB-BiNMOS) circuit is 1.5 times faster than CMOS circuit even at 1 V and that its power dissipation is almost the same power as that of a CMOS circuit, the base-boosted BiCMOS (BB-BiCMOS) circuit is twice as fast and dissipates only 1.2 times as much power. The energy-delay product of the BB-BiCMOS circuit is smaller than that of conventional BiCMOS circuits and is about half of that of a CMOS circuit, the BB-BiCMOS circuit is thus the most promising high-speed circuits for low-voltage and low-power applications.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.12 pp.1658-1665

Publication Date: 1996/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on Low-Power LSI Technologies)

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Kenichi OHHATA, Hiroaki NAMBU, Kazuo KANETANI, Toru MASUDA, Takeshi KUSUNOKI, Noriyuki HOMMA, "A BiCMOS Circuit Using a Base-Boost Technique for Low-Voltage, Low-Power Application" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 12, pp. 1658-1665, December 1996, doi: .
Abstract: BiCMOS circuits using a base-boost technique for low-voltage application have been proposed. These circuits can operate at supply voltages down to 1.5 V. Their power dissipation, however, is 1.5-2 times of that of the CMOS circuit. We propose a novel BiCMOS circuit dissipating less power than that of conventional circuits. A base-boost technique is a key to low-voltage operation, and a gate holding the output voltage and a depletion nMOS pre-charge transistor are also introduced to reduce the power dissipation. Results of simulations using 0.3µm BiCMOS device parameters show that base-boosted BiNMOS (BB-BiNMOS) circuit is 1.5 times faster than CMOS circuit even at 1 V and that its power dissipation is almost the same power as that of a CMOS circuit, the base-boosted BiCMOS (BB-BiCMOS) circuit is twice as fast and dissipates only 1.2 times as much power. The energy-delay product of the BB-BiCMOS circuit is smaller than that of conventional BiCMOS circuits and is about half of that of a CMOS circuit, the BB-BiCMOS circuit is thus the most promising high-speed circuits for low-voltage and low-power applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_12_1658/_p

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@ARTICLE{e79-c_12_1658,
author={Kenichi OHHATA, Hiroaki NAMBU, Kazuo KANETANI, Toru MASUDA, Takeshi KUSUNOKI, Noriyuki HOMMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A BiCMOS Circuit Using a Base-Boost Technique for Low-Voltage, Low-Power Application},
year={1996},
volume={E79-C},
number={12},
pages={1658-1665},
abstract={BiCMOS circuits using a base-boost technique for low-voltage application have been proposed. These circuits can operate at supply voltages down to 1.5 V. Their power dissipation, however, is 1.5-2 times of that of the CMOS circuit. We propose a novel BiCMOS circuit dissipating less power than that of conventional circuits. A base-boost technique is a key to low-voltage operation, and a gate holding the output voltage and a depletion nMOS pre-charge transistor are also introduced to reduce the power dissipation. Results of simulations using 0.3µm BiCMOS device parameters show that base-boosted BiNMOS (BB-BiNMOS) circuit is 1.5 times faster than CMOS circuit even at 1 V and that its power dissipation is almost the same power as that of a CMOS circuit, the base-boosted BiCMOS (BB-BiCMOS) circuit is twice as fast and dissipates only 1.2 times as much power. The energy-delay product of the BB-BiCMOS circuit is smaller than that of conventional BiCMOS circuits and is about half of that of a CMOS circuit, the BB-BiCMOS circuit is thus the most promising high-speed circuits for low-voltage and low-power applications.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - A BiCMOS Circuit Using a Base-Boost Technique for Low-Voltage, Low-Power Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 1658
EP - 1665
AU - Kenichi OHHATA
AU - Hiroaki NAMBU
AU - Kazuo KANETANI
AU - Toru MASUDA
AU - Takeshi KUSUNOKI
AU - Noriyuki HOMMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1996
AB - BiCMOS circuits using a base-boost technique for low-voltage application have been proposed. These circuits can operate at supply voltages down to 1.5 V. Their power dissipation, however, is 1.5-2 times of that of the CMOS circuit. We propose a novel BiCMOS circuit dissipating less power than that of conventional circuits. A base-boost technique is a key to low-voltage operation, and a gate holding the output voltage and a depletion nMOS pre-charge transistor are also introduced to reduce the power dissipation. Results of simulations using 0.3µm BiCMOS device parameters show that base-boosted BiNMOS (BB-BiNMOS) circuit is 1.5 times faster than CMOS circuit even at 1 V and that its power dissipation is almost the same power as that of a CMOS circuit, the base-boosted BiCMOS (BB-BiCMOS) circuit is twice as fast and dissipates only 1.2 times as much power. The energy-delay product of the BB-BiCMOS circuit is smaller than that of conventional BiCMOS circuits and is about half of that of a CMOS circuit, the BB-BiCMOS circuit is thus the most promising high-speed circuits for low-voltage and low-power applications.
ER -