Test Structure for the Evaluation of Si Substrates

Yoshiko YOSHIDA; Mikihiro KIMURA; Morihiko KUME; Hidekazu YAMAMOTO; Hiroshi KOYAMA

Test Structure for the Evaluation of Si Substrates

Yoshiko YOSHIDA, Mikihiro KIMURA, Morihiko KUME, Hidekazu YAMAMOTO, Hiroshi KOYAMA

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The quality of Si substrates affecting the oxide reliability was investigated using various kinds of test structures like flat capacitor, field edge array and gate edge array. The field edge array test structure which resembles the conditions found for real device is shown to be quite effective to determine the quality of oxides. Oxide grown on a P type epitaxial layer on P⁺ silicon substrate shows the highest reliability in all test structures. Gettering of heavy metals and/or crystal defects by the P⁺ silicon substrate is the dominant mechanism for the improvement of the oxide reliability. H₂ annealed silicon shows a good reliability if monitored using the flat capacitor. However, using the field edge array test structure, which is strongly influenced by real device process, the reliability of the oxide grown on H₂ annealed silicon degrades.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.2 pp.192-197

Publication Date: 1996/02/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)

Category: SOI & Material Characterization

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Yoshiko YOSHIDA, Mikihiro KIMURA, Morihiko KUME, Hidekazu YAMAMOTO, Hiroshi KOYAMA, "Test Structure for the Evaluation of Si Substrates" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 2, pp. 192-197, February 1996, doi: .
Abstract: The quality of Si substrates affecting the oxide reliability was investigated using various kinds of test structures like flat capacitor, field edge array and gate edge array. The field edge array test structure which resembles the conditions found for real device is shown to be quite effective to determine the quality of oxides. Oxide grown on a P type epitaxial layer on P⁺ silicon substrate shows the highest reliability in all test structures. Gettering of heavy metals and/or crystal defects by the P⁺ silicon substrate is the dominant mechanism for the improvement of the oxide reliability. H₂ annealed silicon shows a good reliability if monitored using the flat capacitor. However, using the field edge array test structure, which is strongly influenced by real device process, the reliability of the oxide grown on H₂ annealed silicon degrades.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_2_192/_p

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@ARTICLE{e79-c_2_192,
author={Yoshiko YOSHIDA, Mikihiro KIMURA, Morihiko KUME, Hidekazu YAMAMOTO, Hiroshi KOYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Test Structure for the Evaluation of Si Substrates},
year={1996},
volume={E79-C},
number={2},
pages={192-197},
abstract={The quality of Si substrates affecting the oxide reliability was investigated using various kinds of test structures like flat capacitor, field edge array and gate edge array. The field edge array test structure which resembles the conditions found for real device is shown to be quite effective to determine the quality of oxides. Oxide grown on a P type epitaxial layer on P⁺ silicon substrate shows the highest reliability in all test structures. Gettering of heavy metals and/or crystal defects by the P⁺ silicon substrate is the dominant mechanism for the improvement of the oxide reliability. H₂ annealed silicon shows a good reliability if monitored using the flat capacitor. However, using the field edge array test structure, which is strongly influenced by real device process, the reliability of the oxide grown on H₂ annealed silicon degrades.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Test Structure for the Evaluation of Si Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 192
EP - 197
AU - Yoshiko YOSHIDA
AU - Mikihiro KIMURA
AU - Morihiko KUME
AU - Hidekazu YAMAMOTO
AU - Hiroshi KOYAMA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1996
AB - The quality of Si substrates affecting the oxide reliability was investigated using various kinds of test structures like flat capacitor, field edge array and gate edge array. The field edge array test structure which resembles the conditions found for real device is shown to be quite effective to determine the quality of oxides. Oxide grown on a P type epitaxial layer on P⁺ silicon substrate shows the highest reliability in all test structures. Gettering of heavy metals and/or crystal defects by the P⁺ silicon substrate is the dominant mechanism for the improvement of the oxide reliability. H₂ annealed silicon shows a good reliability if monitored using the flat capacitor. However, using the field edge array test structure, which is strongly influenced by real device process, the reliability of the oxide grown on H₂ annealed silicon degrades.
ER -