Issues of Wet Cleaning in ULSI Process
Summary :
Wet cleaning in actual LSI process is difficult to remove contamination perfectly, because the cleaning condition must be moderate to maintain device characteristics and device texture and because wet cleaning is not so effective for the particles generated during processes such as etching, photo lithography and film formation. Particle reduction depends on particle characteristics, i.e. the sticking force and the chemical structure of the particles. Metallic contamination on wafers, depending on the kind of solutions and the metal concentration in cleaning solutions, degrades TDDB characteristics and recom-bination lifetime. Although the lifetime degradation by the metallic contamination is appreciable, it is much smaller than those caused by damage in etching and in ion implantation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.3 pp.337-342
- Publication Date
- 1996/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Scientific ULSI Manufacturing Technology)
- Category
- High-Performance Processing
Authors
Keyword
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Tsuneo AJIOKA, Mayumi SHIBATA, Yasuo MIZOKAMI, "Issues of Wet Cleaning in ULSI Process" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 3, pp. 337-342, March 1996, doi: .
Abstract: Wet cleaning in actual LSI process is difficult to remove contamination perfectly, because the cleaning condition must be moderate to maintain device characteristics and device texture and because wet cleaning is not so effective for the particles generated during processes such as etching, photo lithography and film formation. Particle reduction depends on particle characteristics, i.e. the sticking force and the chemical structure of the particles. Metallic contamination on wafers, depending on the kind of solutions and the metal concentration in cleaning solutions, degrades TDDB characteristics and recom-bination lifetime. Although the lifetime degradation by the metallic contamination is appreciable, it is much smaller than those caused by damage in etching and in ion implantation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_3_337/_p
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@ARTICLE{e79-c_3_337,
author={Tsuneo AJIOKA, Mayumi SHIBATA, Yasuo MIZOKAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Issues of Wet Cleaning in ULSI Process},
year={1996},
volume={E79-C},
number={3},
pages={337-342},
abstract={Wet cleaning in actual LSI process is difficult to remove contamination perfectly, because the cleaning condition must be moderate to maintain device characteristics and device texture and because wet cleaning is not so effective for the particles generated during processes such as etching, photo lithography and film formation. Particle reduction depends on particle characteristics, i.e. the sticking force and the chemical structure of the particles. Metallic contamination on wafers, depending on the kind of solutions and the metal concentration in cleaning solutions, degrades TDDB characteristics and recom-bination lifetime. Although the lifetime degradation by the metallic contamination is appreciable, it is much smaller than those caused by damage in etching and in ion implantation.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Issues of Wet Cleaning in ULSI Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 337
EP - 342
AU - Tsuneo AJIOKA
AU - Mayumi SHIBATA
AU - Yasuo MIZOKAMI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1996
AB - Wet cleaning in actual LSI process is difficult to remove contamination perfectly, because the cleaning condition must be moderate to maintain device characteristics and device texture and because wet cleaning is not so effective for the particles generated during processes such as etching, photo lithography and film formation. Particle reduction depends on particle characteristics, i.e. the sticking force and the chemical structure of the particles. Metallic contamination on wafers, depending on the kind of solutions and the metal concentration in cleaning solutions, degrades TDDB characteristics and recom-bination lifetime. Although the lifetime degradation by the metallic contamination is appreciable, it is much smaller than those caused by damage in etching and in ion implantation.
ER -
English
